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-coated Si nanocrystal memory
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10.1063/1.3110183
/content/aip/journal/jap/105/8/10.1063/1.3110183
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/8/10.1063/1.3110183
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Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic of -coated Si nanocrystal memory device, and (b) energy band diagrams of -coated Si nanocrystal and Si only nanocrystal memories. Wide distribution of deep levels arises from embedding of Si nanocrystals in oxide (right schematic). These deep levels may be pinned along the Fermi level of (left schematic).

Image of FIG. 2.
FIG. 2.

EDX spectrum of -coated Si nanocrystals. Insets show the SEM images of (a) Si nanocrystals and (b) -coated Si nanocrystals.

Image of FIG. 3.
FIG. 3.

(a) Capacitance-voltage sweep of MOS memory with -coated Si nanocrystals, (b) comparison between -coated Si nanocrystal and Si nanocrystal memories, (c) sweep of MOS reference device, where no nanocrystals were embedded.

Image of FIG. 4.
FIG. 4.

Transient programming and erasing characteristics of Si nanocrystal and -coated Si nanocrystal memories.

Image of FIG. 5.
FIG. 5.

Endurance characteristics of Si nanocrystal and -coated Si nanocrystal memories.

Image of FIG. 6.
FIG. 6.

Remained charge percentage converted from threshold voltage shift as a function of time.

Image of FIG. 7.
FIG. 7.

Hot-carrier programming and erasing characteristics of -coated Si nanocrystal and Si nanocrystal memories.

Image of FIG. 8.
FIG. 8.

Retention characteristics of -coated Si nanocrystal and Si nanocrystal memories after HCI programming. The charge loss after seconds in -coated Si nanocrystal and Si nanocrystal memories are and , respectively.

Image of FIG. 9.
FIG. 9.

Retention characteristics of -coated Si nanocrystal memory after HCI programming under forward and reversed read conditions.

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/content/aip/journal/jap/105/8/10.1063/1.3110183
2009-04-23
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: CoSi2-coated Si nanocrystal memory
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/8/10.1063/1.3110183
10.1063/1.3110183
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