Typical major loops for BAF-MTJ and TAF-MTJ of 1.8 nm thick barrier. The orientation of the magnetic field applied during vacuum annealing at and the magnetization of free and pinned layers are indicated by arrows. The loops were taken at RT with 10 mV bias voltage. The junction area was .
Variation of the current with applied voltage for TAF-MTJs with 1.8 and 2.1 nm thick MgO barriers, respectively. The MTJ with 1.8 nm (2.1 nm) thick barrier broke abruptly at . The magnetization state was antiparallel, and the junction area was .
A comparison of the breakdown voltage dependence on the junction area and the polarity of the applied voltage of BAF-MTJ and TAF-MTJ for (a) antiparallel and (b) parallel magnetization alignments. Each point is an average over five individual measurements, and the error bars represent the standard deviation. The ramp speed was 15 mV/s.
The breakdown voltage dependence on the junction area and voltage polarity for TAF-MTJ and BAF-MTJ with 2.1 nm thick barrier. Each point is an average of five individual measurements, and the error bars represent the standard deviation. The data were taken in the antiparallel magnetization state.
Differential resistance spectra for parallel and antiparallel magnetization states measured at 12.5 K for (a) BAF-MTJ and (b) TAF-MTJ. The barrier thickness was 1.8 nm.
(a) Inelastic electron tunneling spectra for BAF-MTJ and TAF-MTJ with 1.8 nm thick barrier in antiparallel magnetic state. (b) Inelastic electron tunneling spectra for both systems in parallel magnetic states. The measurements were taken at 12.5 K, and the junction size was .
Typical normalized temperature dependence TMR for BAF-MTJ and TAF-MTJ measured with 10 mV bias voltage. The data are normalized to the TMR ratio at 20 K (BAF-MTJ: 244% and TAF-MTJ: 216%).
Summary of TMR ratios and area resistance product for BAF-MTJs and TAF-MTJs with 1.8 and 2.1 nm thick MgO barriers. All measurements were performed prior to the breakdown experiments at RT with 10 mV bias voltage.
in antiparallel and parallel states with voltage bias polarities for 1.8 nm thick barrier.
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