The schematic structure of HIWIP FIR detector after device processing. , , and denote the contact layer, emitter layer, and intrinsic layer, respectively. The optical window is opened on the top.
The dependence of the quantum efficiency on the emitter thickness and the intrinsic thickness at .
The schematic structure of RCE HIWIP FIR detector after device processing. The whole detector can be divided into two parts: the detector cavity and the bottom mirror. Two different designs of bottom mirror are presented. The GaAs mirror consists of a bottom contact layer and one period of undoped/doped GaAs layers, while the gold mirror is composed of a bottom contact layer, an undoped GaAs layer, and a gold layer. The top mirror surface is characterized by the top mirror reflectivity and phase shift .
The dependence of quantum efficiency on the thicknesses of the undoped and doped GaAs layers in the bottom mirror for (a) the optimized detector structure and (b) the detector with .
The reflectivity and phase shift of the bottom mirror vs the thickness of (a) the gold layer and (b) the undoped GaAs layer . The inset displays dependence of the quantum efficiency on .
The energy flux distribution from the top layer to the bottom layer for (a) the detector without bottom mirror, (b) the RCE detector with GaAs mirror, and (c) the RCE detector with gold mirror. The thickness of zero denotes the native semiconductor and air interface.
The dependence of quantum efficiency on wavelength for the detector without bottom mirror, with GaAs mirror, and with gold mirror.
The dependence of quantum efficiency on the top mirror reflectivity and phase shift for the detector (a) with the GaAs mirror and (b) with the gold mirror.
The dependence of quantum efficiency on top mirror reflectivity for bottom mirror reflectivity , 0.81, and 0.98. The top mirror phase shift is and the bottom mirror phase shift is .
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