RBS spectrum of the -C:H film grown at an applied substrate bias, , of . The inset shows the simultaneously recorded ERDA spectrum (closed triangles) together with ERDA spectra taken from the Mylar foil (open circles) and the -C:H film grown at (open squares).
ERDA H content of the -C:H films as a function of the applied substrate bias voltage.
Background subtracted IR absorption spectra of -C:H films deposited with varying applied substrate bias.
(a) Raman spectra of -C:H films deposited with varying applied substrate bias voltages (in volts). (b) Raman signal of the -C:H film grown at with indicated linear PL background.
XANES spectra of -C:H films deposited with varying applied substrate bias. The reference spectra of HOPG, diamond, and ta-C are added in the lower part of the figure. The determination of the intensity of the states, , is indicated for the -C:H films grown at and .
Correlation between hydrogen content measured by ERDA and (a) the normalized IR (C–H) band area at about , (b) the Raman PL background, and (c) the XANES band intensity. The dashed lines represent the linear best fits through the data points from which the empirical expressions (1), (2), and (4) are derived (see text). The closed squares, open triangles, and solid line in (b) represent the four data points obtained by ERDA directly, the two data points obtained by interpolation of the ERDA data in Fig. 2, and the expression between PL background and hydrogen content (3) found by Casiraghi et al. (Ref. 10), respectively.
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