(a) Scanning electron micrograph of coupled nanocavity PC array. The inset shows the cross section of the PC membrane. (b) Far-field radiation pattern of coupled cavity array mode obtained at a pump power 1.4 above threshold. (c) Electric field intensity of coupled quadrupole mode.
(a) LL curve of single cavity structure under pulsed excitation. (b) Single cavity laser spectrum at averaged pump power.
(a) Single cavity lasing response (dots) and rate equations fit . Pump power . All plots are normalized to the maximum intensity. (b) Coupled-cavity array lasing response ( times threshold). The rate equations model do not adequately explain the long lasing duration. The delay between pump and lasing action equals for the first (second) pulse. (c) Single cavity response to excitation by two pulses: top, lasing level concentration; center, measured excitation sequence; bottom, observed intensity and rate equations fit.
(a) Lasing-level carrier concentration ( after injection) showing density gradient toward lasing cavity. Spatial hole burning results from the fast stimulated recombination during the lasing pulse. Pump power is at the center of the Gaussian spot with radius , where is the PC lattice period. (b) Carrier concentration in PC array, after injection. Pump energy corresponds to . Small inhomogeneities in the pump spot (radius ) and coupled cavity mode can result in a spreading of lasing onset times, contributing to longer total pulse duration. (c) Scanning electron micrograph (SEM) of single cavity InP laser structure. (d) Out-of-plane magnetic field of lasing mode, after carrier injection.
Article metrics loading...
Full text loading...