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Temperature-induced chaos during nanorod growth by physical vapor deposition
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10.1063/1.3116720
/content/aip/journal/jap/105/9/10.1063/1.3116720
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/9/10.1063/1.3116720
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Plan-view and cross-sectional scanning electron micrographs from [(a) and (d)] Ta, [(b) and (e)] Cr, and [(c) and (f)] Al nanorod layers grown by GLAD at .

Image of FIG. 2.
FIG. 2.

Plan-view and cross-sectional micrographs from Ta nanorods grown at [(a) and (d)] 200, [(b) and (e)] 500, and [(c) and (f)] .

Image of FIG. 3.
FIG. 3.

(a) Plot of nanorod width at a height of 400 nm vs homologous temperature . Triangles represent data from other published reports.6,40–45 (b) The same data as in (a) plotted as double logarithm of vs inverse homologous temperature , including independent linear fits for high and low-temperature regimes. (c) Variation in the composite constant vs obtained from Eq. (7) and the low- and high- fits in (b) for various values of the critical island size and dimensionality of adatom transport .

Image of FIG. 4.
FIG. 4.

Comparison of obtained from the nanorod analysis with reported activation energies for various low-index metal surfaces.17,60–68

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/content/aip/journal/jap/105/9/10.1063/1.3116720
2009-05-07
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Temperature-induced chaos during nanorod growth by physical vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/9/10.1063/1.3116720
10.1063/1.3116720
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