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Controllable modification of self-assembled monolayer surface by using neutral beam process
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10.1063/1.3117516
/content/aip/journal/jap/105/9/10.1063/1.3117516
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/9/10.1063/1.3117516
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic structure of (a) TP1, (b) C8, (c) C12, and (d) C18 SAMs.

Image of FIG. 2.
FIG. 2.

Schematic diagram of NB process. It consists of an ICP plasma source, and top and bottom parallel plates. There are many apertures on the bottom plate, and generated ions are neutralized by charge exchange when they pass through the apertures.

Image of FIG. 3.
FIG. 3.

(a) C and (b) N XPS spectra before and after 5 s of plasma irradiation. Samples are placed in the ICP plasma source. Pressure was 0.9 Pa and rf power was 250 W.

Image of FIG. 4.
FIG. 4.

C and S intensities as functions of ion irradiation time. We used 500 eV ion irradiation.

Image of FIG. 5.
FIG. 5.

Typical ultraviolet spectrum during the conventional inductively coupled plasma. Pressure was 0.65 Pa and rf power was 500 W.

Image of FIG. 6.
FIG. 6.

(a) C and (b) N XPS spectra after 5 and 60 min of radical irradiation. Downstream plasma was used for radical irradiation. The plasma source was located 100 mm from the sample surface. Process chamber pressure was 0.09 Pa, the same as for NB irradiation.

Image of FIG. 7.
FIG. 7.

(a) C , (b) N , and S XPS spectra before and after 5 s of NB irradiation. Pressures of the plasma chamber and process chamber were 0.9 and 0.09 Pa, respectively. rf power for the plasma discharge was 250 W.

Image of FIG. 8.
FIG. 8.

(a) C and (b) N XPS spectra after 5 s of cw or TM NB irradiation. The pulse on/off time was irradiation. Pressure was 0.9 Pa, and rf power was 250 W.

Image of FIG. 9.
FIG. 9.

N spectra for varying pulse on/off times during 5 s TM-NB irradiation. Pressure was 0.9 Pa and rf power was 250 W.

Image of FIG. 10.
FIG. 10.

TOF-SIMS spectra before NB irradiation.

Image of FIG. 11.
FIG. 11.

TOF-SIMS spectra before and after 5 s of cw or TM NB irradiation. (a) Spectra around and (b) spectra around . Pressures of the plasma chamber and process chambers were 0.9 and 0.09 Pa, respectively. rf power for plasma discharge was 250 W. On/off time of the TM NB irradiation .

Image of FIG. 12.
FIG. 12.

Components of and . 258.12 corresponds to , and 273.12 corresponds to .

Image of FIG. 13.
FIG. 13.

TOF-SIMS spectra around . This signal corresponds to the signal of TP1 SAMs.

Image of FIG. 14.
FIG. 14.

Effect of cw and TM NB irradiation on surface nitridation of TP1 SAMs.

Image of FIG. 15.
FIG. 15.

C and S XPS spectra before and after 5 s NB irradiation of C8 SAMs [(a) and (b)], C12 SAMs [(c) and (d)], and C18 SAMs [(e) and (f)]. The pulse on/off time was . Pressure was 0.9 Pa and rf power was 250 W.

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/content/aip/journal/jap/105/9/10.1063/1.3117516
2009-05-08
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Controllable modification of self-assembled monolayer surface by using N2 neutral beam process
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/9/10.1063/1.3117516
10.1063/1.3117516
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