(a) Schematic structure of a RCE SiGe/Si MQW photodetector. (b) Band diagram of a structure showing carrier confinement at heterointerfaces.
(a) Lateral view of a RCE SiGe/Si MQW photodetector. Numbers at the bottom of the diagram indicate the positions of heterointerfaces. Electrons are confined at the odd-numbered interfaces while holes are confined at the even-numbered interfaces. (b) Energy band diagram of a single well at no bias. (c) Valence-band diagram of a single well under bias.
Responsivity vs reverse bias voltage plot for model verification. The experimental data taken from literature (Ref. 16) are shown by circles.
Responsivity of a RCE SiGe/Si MQW photodetector as a function of Ge-content , for five different values of (0.69, 0.85, 1.0, 1.3, and ), , , and number of wells . In (a), and in (b), .
Responsivity of a RCE SiGe/Si MQW photodetector as a function of bias voltage with number of wells as parameter keeping fixed at 20 nm and at 30 nm; (a) , Ge-content 0.35 and (b) , Ge-content 0.5.
Variation of the responsivity of the photodetector as a function of well thickness with as parameter at a fixed bias of 5 V and . (a) , Ge-content 0.35 and (b) , Ge-content 0.5.
Dependence of responsivity on the number of wells for three different biases in a RCE SiGe/Si MQW photodetector taking and . (a) , Ge-content 0.35 and (b) , Ge-content 0.5.
Material parameters of SiGe for different Ge-content ( assumed).
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