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Calculating the responsivity of a resonant-cavity-enhanced multiple quantum well photodetector
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10.1063/1.3117519
/content/aip/journal/jap/105/9/10.1063/1.3117519
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/9/10.1063/1.3117519

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic structure of a RCE SiGe/Si MQW photodetector. (b) Band diagram of a structure showing carrier confinement at heterointerfaces.

Image of FIG. 2.
FIG. 2.

(a) Lateral view of a RCE SiGe/Si MQW photodetector. Numbers at the bottom of the diagram indicate the positions of heterointerfaces. Electrons are confined at the odd-numbered interfaces while holes are confined at the even-numbered interfaces. (b) Energy band diagram of a single well at no bias. (c) Valence-band diagram of a single well under bias.

Image of FIG. 3.
FIG. 3.

Responsivity vs reverse bias voltage plot for model verification. The experimental data taken from literature (Ref. 16) are shown by circles.

Image of FIG. 4.
FIG. 4.

Responsivity of a RCE SiGe/Si MQW photodetector as a function of Ge-content , for five different values of (0.69, 0.85, 1.0, 1.3, and ), , , and number of wells . In (a), and in (b), .

Image of FIG. 5.
FIG. 5.

Responsivity of a RCE SiGe/Si MQW photodetector as a function of bias voltage with number of wells as parameter keeping fixed at 20 nm and at 30 nm; (a) , Ge-content 0.35 and (b) , Ge-content 0.5.

Image of FIG. 6.
FIG. 6.

Variation of the responsivity of the photodetector as a function of well thickness with as parameter at a fixed bias of 5 V and . (a) , Ge-content 0.35 and (b) , Ge-content 0.5.

Image of FIG. 7.
FIG. 7.

Dependence of responsivity on the number of wells for three different biases in a RCE SiGe/Si MQW photodetector taking and . (a) , Ge-content 0.35 and (b) , Ge-content 0.5.

Tables

Generic image for table
Table I.

Material parameters of SiGe for different Ge-content ( assumed).

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/content/aip/journal/jap/105/9/10.1063/1.3117519
2009-05-14
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Calculating the responsivity of a resonant-cavity-enhanced Si1−xGex/Si multiple quantum well photodetector
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/9/10.1063/1.3117519
10.1063/1.3117519
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