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Large zero-field spin splitting in AlGaN/AlN/GaN/AlN heterostructures
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Image of FIG. 1.
FIG. 1.

Layer structure of our samples.

Image of FIG. 2.
FIG. 2.

Temperature dependent Hall mobility and Hall sheet carrier density of our samples. Lines are guides to the eyes.

Image of FIG. 3.
FIG. 3.

Magnetic field dependent longitudinal magnetoresistivity at 2 K. Insert: SdH oscillations in the range of magnetic fields 8–14 T.

Image of FIG. 4.
FIG. 4.

The negative second derivative of the magnetoresistance with respect to an inverse magnetic field. The insert shows two main frequencies derived from the Fourier analysis of the the SdH oscillations.

Image of FIG. 5.
FIG. 5.

Electron (solid lines) and hole (dashed lines) QMSA spectra at (a) 22 and (b) 159 K.

Image of FIG. 6.
FIG. 6.

(a) Conduction band profile (full line) and Fermi level (dashed line) for our heterostructure. Insert: first two subband energies and Fermi level and related electron wave functions. (b) Conduction band profile (full line) and calculated sheet carrier density (dashed line).

Image of FIG. 7.
FIG. 7.

Sheet carrier density dependent zero-field spin splitting energy values using data listed in Table I. Filled and empty symbols represent SdH and WAL experiment results, respectively. Dashed line is guide to the eyes and dotted line represents the theoretical value based on the Rashba coupling mechanism.


Generic image for table
Table I.

Growth, electrical and spin related parameters, and experimental method used to calculate the spin-splitting energy for our AlGaN/AlN/GaN/AlN samples and for AlGaN/GaN and AlGaN/AlN/GaN structures in the literature (Refs. 10, 12, and 15–21).


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Large zero-field spin splitting in AlGaN/AlN/GaN/AlN heterostructures