Layer structure of our samples.
Temperature dependent Hall mobility and Hall sheet carrier density of our samples. Lines are guides to the eyes.
Magnetic field dependent longitudinal magnetoresistivity at 2 K. Insert: SdH oscillations in the range of magnetic fields 8–14 T.
The negative second derivative of the magnetoresistance with respect to an inverse magnetic field. The insert shows two main frequencies derived from the Fourier analysis of the the SdH oscillations.
Electron (solid lines) and hole (dashed lines) QMSA spectra at (a) 22 and (b) 159 K.
(a) Conduction band profile (full line) and Fermi level (dashed line) for our heterostructure. Insert: first two subband energies and Fermi level and related electron wave functions. (b) Conduction band profile (full line) and calculated sheet carrier density (dashed line).
Sheet carrier density dependent zero-field spin splitting energy values using data listed in Table I. Filled and empty symbols represent SdH and WAL experiment results, respectively. Dashed line is guide to the eyes and dotted line represents the theoretical value based on the Rashba coupling mechanism.
Growth, electrical and spin related parameters, and experimental method used to calculate the spin-splitting energy for our AlGaN/AlN/GaN/AlN samples and for AlGaN/GaN and AlGaN/AlN/GaN structures in the literature (Refs. 10, 12, and 15–21).
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