Cross-sectional TEM image for the InAs QDs embedded in GaAs matrix.
PL spectra of InAs QDs at different excitation powers normalized from the first peak (at 1.057 eV).
PL spectra measured at different temperatures of the InAs/GaAs QDs.
The calculated electron envelope functions of the ground and first excited states for the lens-shaped InAs QD embedded in GaAs matrix.
Calculated electron-heavy-hole transition energies ( and ) in a lens-shaped InAs QD as a function of the QD radius. The InAs QD height .
Variation in transition energy as a function of the temperature for InAs/GaAs QDs.
Physical constants of the material: is the effective mass for the well (InAs) in units, is the effective mass for the barrier (GaAs) in units, is the free electron mass, and is the barrier potential energy (meV) for the electron (hole) taking into account the averaged effect of strain.
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