1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Deep defects in GaN/AlGaN/SiC heterostructures
Rent:
Rent this article for
USD
10.1063/1.3122290
/content/aip/journal/jap/105/9/10.1063/1.3122290
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/9/10.1063/1.3122290

Figures

Image of FIG. 1.
FIG. 1.

Capacitance and conductance as a function of temperature. Measurement was performed in the parallel circuit mode at 1 MHz test frequency and zero dc bias.

Image of FIG. 2.
FIG. 2.

Capacitance as a function of the test frequency. Measurement was performed in the parallel circuit mode at zero dc bias.

Image of FIG. 3.
FIG. 3.

Conductance/angular frequency as a function of the test frequency. Measurement was performed in the parallel circuit mode at zero dc bias.

Image of FIG. 4.
FIG. 4.

DLTS spectra of a GaN/AlGaN/SiC heterostructure grown on an on-axis 4H-SiC substrate. All the spectra were taken at a reverse bias of −4 V, a pulse bias of , and a pulse width of 2 ms.

Image of FIG. 5.
FIG. 5.

Arrhenius plot associated with the data presented in Fig. 4. The electron emission rate, , divided by is plotted against the reciprocal peak temperature to obtain the activation energy, , and the apparent capture cross section of the deep level.

Image of FIG. 6.
FIG. 6.

DLTS spectra of a GaN/AlGaN/SiC heterostructure with 8% Al content grown on an on-axis 4H-SiC substrate demonstrating an effect of the reverse bias. All the spectra were taken at a rate window of , a pulse bias of −1 V, and a pulse width of 0.2 ms.

Image of FIG. 7.
FIG. 7.

DLTS spectra of a GaN/AlGaN/SiC heterostructure with 8% Al content grown on an on-axis 4H-SiC substrate showing an effect of the filling pulse width. All frequency scans were performed at a reverse bias of −4 V, a pulse bias of 0 V, and a constant temperature of 353 K.

Image of FIG. 8.
FIG. 8.

DLTS spectra of a GaN/AlGaN/SiC heterostructure with 8% Al content grown on an on-axis 4H-SiC substrate. Frequency scans were performed at various temperatures using a reverse bias of −4 V, a pulse bias of 0 V, and a pulse width of 0.3 ms.

Image of FIG. 9.
FIG. 9.

High-temperature DLTS peak of a GaN/AlGaN/SiC heterostructure with 8% Al content grown on an on-axis 4H-SiC substrate. The spectra were taken at a reverse bias of −2 V, a pulse bias of , and a pulse width of 0.2 ms.

Image of FIG. 10.
FIG. 10.

Low-temperature DLTS peak of a GaN/AlGaN/SiC heterostructure with 8% Al content grown on an on-axis 4H-SiC substrate. The spectra were taken at a reverse bias of −2 V, a pulse bias of , and a pulse width of 0.2 ms.

Image of FIG. 11.
FIG. 11.

Amplitude of the dominant majority carrier peak appearing in the DLTS spectra of a GaN/AlGaN/SiC heterostructure with 30% Al content grown on an on-axis 4H-SiC substrate as a function of filling pulse width. The measurement was performed at 353 K under a reverse bias of −4 V and a pulse bias of −1 V.

Image of FIG. 12.
FIG. 12.

DLTS spectra of a GaN/AlGaN/SiC heterostructure grown on an off-axis 4H-SiC substrate. All the spectra were taken at a reverse bias of −4 V, a pulse bias of , and a pulse width of 2 ms.

Image of FIG. 13.
FIG. 13.

DLTS spectra of a GaN/AlGaN/SiC heterostructure grown on an off-axis 4H-SiC substrate. All the spectra were taken at a reverse bias of −4 V, a pulse bias of , and a pulse width of 2 ms. The pulse bias reduction from (see Fig. 12) to leads to positive peak lowering as well as to appearance of a broad negative signal region.

Tables

Generic image for table
Table I.

Activation energy, , and capture cross section, , of the dominant deep level observed in the on-axis grown samples by DLTS. For each nucleation layer composition, three sets of the level parameters are presented to demonstrate the electrical field effect. The error of values does not exceed ±0.003 eV. The capture cross section is calculated for .

Generic image for table
Table II.

Activation energy, capture cross section, and concentration of the deep levels observed in the on-axis grown samples. The mean values deduced from Table I are used to represent the activation energy and the capture cross section of the dominant level. All the capture cross sections are calculated from Arrhenius plots assuming .

Loading

Article metrics loading...

/content/aip/journal/jap/105/9/10.1063/1.3122290
2009-05-05
2014-04-17
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Deep defects in GaN/AlGaN/SiC heterostructures
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/9/10.1063/1.3122290
10.1063/1.3122290
SEARCH_EXPAND_ITEM