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Nonlinear optical properties of Si nanocrystals embedded in prepared by a cosputtering method
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View: Figures


Image of FIG. 1.
FIG. 1.

PL (left axis) and absorption (right axis) spectra of a typical sample (, , ). The dashed line is a result of fitting by assuming an indirect bandgap semiconductor . The optical bandgap is estimated to be 2.4 eV.

Image of FIG. 2.
FIG. 2.

Results of -scan measurements for (a) a closed aperture , (b) an open aperture , and (c) the ratio of the two results . The squares are experimental results and the solid curves are results of fittings.

Image of FIG. 3.
FIG. 3.

(left axis) and (right axis) spectra of a typical sample (, , ). The dashed and dotted curves are PL and absorption spectra, respectively.

Image of FIG. 4.
FIG. 4.

spectra of samples with different excess Si concentrations and different annealing temperatures . The same colored (or shaped) symbols are used for the same (or ) samples.

Image of FIG. 5.
FIG. 5.

Si concentration dependence of . The inset shows the size dependence of the microscopic nonlinear refractive index of Si-ncs. The dotted line is a dependence predicted by a simple quantum confinement model.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nonlinear optical properties of Si nanocrystals embedded in SiO2 prepared by a cosputtering method