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Transient atomic behavior and surface kinetics of GaN
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10.1063/1.3148275
/content/aip/journal/jap/106/1/10.1063/1.3148275
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/1/10.1063/1.3148275

Figures

Image of FIG. 1.
FIG. 1.

AFM of step-flow growth achieved by MME.

Image of FIG. 2.
FIG. 2.

Transient RHEED signals for a variety of metal-rich Ga fluxes (shown on the right). Shaded regions indicate Ga shutter open portion of the modulation scheme.

Image of FIG. 3.
FIG. 3.

Detailed view of two representative transient RHEED signals for low and high Ga flux conditions. Features are labeled and shaded region indicates Ga shutter open portion of the modulation scheme.

Image of FIG. 4.
FIG. 4.

Illustrations of each feature labeled in Fig. 3.

Image of FIG. 5.
FIG. 5.

RGA signal of mass 27, which mimics nitrogen. Shaded region indicates Ga shutter open portion of the modulation scheme. Note that the partial pressure of mass 27 tends toward a lower pressure when Ga shutter is open, indicative of the nitrogen consumed during GaN growth.

Image of FIG. 6.
FIG. 6.

Recorded delay before RHEED intensity increase after Ga shutter close in the metal-rich regime versus flux for two temperatures. Note that the increase is linear after BEP.

Image of FIG. 7.
FIG. 7.

Transient RHEED signal recorded after closing both N and Ga shutters and desorbing off Ga from the sample. Both shutters were opened and no spike in intensity was seen on the first cycle, which confirms the relation of the spike to the nitrogen adlayer. Shaded regions indicate Ga shutter open portions of the modulation scheme, while the nitrogen shutter was permanently opened at the beginning of the first shaded region.

Image of FIG. 8.
FIG. 8.

Measured growth rate and estimated in situ growth rate for three Ga fluxes.

Tables

Generic image for table
Table I.

Properties of significant substrates for the growth of GaN.

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/content/aip/journal/jap/106/1/10.1063/1.3148275
2009-07-09
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Transient atomic behavior and surface kinetics of GaN
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/1/10.1063/1.3148275
10.1063/1.3148275
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