AFM of step-flow growth achieved by MME.
Transient RHEED signals for a variety of metal-rich Ga fluxes (shown on the right). Shaded regions indicate Ga shutter open portion of the modulation scheme.
Detailed view of two representative transient RHEED signals for low and high Ga flux conditions. Features are labeled and shaded region indicates Ga shutter open portion of the modulation scheme.
Illustrations of each feature labeled in Fig. 3.
RGA signal of mass 27, which mimics nitrogen. Shaded region indicates Ga shutter open portion of the modulation scheme. Note that the partial pressure of mass 27 tends toward a lower pressure when Ga shutter is open, indicative of the nitrogen consumed during GaN growth.
Recorded delay before RHEED intensity increase after Ga shutter close in the metal-rich regime versus flux for two temperatures. Note that the increase is linear after BEP.
Transient RHEED signal recorded after closing both N and Ga shutters and desorbing off Ga from the sample. Both shutters were opened and no spike in intensity was seen on the first cycle, which confirms the relation of the spike to the nitrogen adlayer. Shaded regions indicate Ga shutter open portions of the modulation scheme, while the nitrogen shutter was permanently opened at the beginning of the first shaded region.
Measured growth rate and estimated in situ growth rate for three Ga fluxes.
Properties of significant substrates for the growth of GaN.
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