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Electronic transport and Schottky barrier heights of Pt/-type GaN Schottky diodes in the extrinsic region
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10.1063/1.3158058
/content/aip/journal/jap/106/1/10.1063/1.3158058
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/1/10.1063/1.3158058

Figures

Image of FIG. 1.
FIG. 1.

A schematic illustration of the fabricated -type GaN Schottky structure.

Image of FIG. 2.
FIG. 2.

curve of the Pt/-type GaN Schottky diode under forward bias condition and the fitting curve to the characteristic in the TE regime.

Image of FIG. 3.
FIG. 3.

, , and as a function of the temperature for -type GaN samples.

Image of FIG. 4.
FIG. 4.

curve of the Pt/-type GaN Schottky diode under forward bias condition and the fitting curve to the characteristic in the TFE regime.

Tables

Generic image for table
Table I.

The experimentally obtained characteristic parameters of the Pt/-type GaN Schottky diodes in the temperature range of 100–300 K based on the TE model.

Generic image for table
Table II.

The experimentally obtained characteristic parameters of the Pt/-type GaN Schottky diodes in the temperature range of 100–300 K based on the TFE model.

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/content/aip/journal/jap/106/1/10.1063/1.3158058
2009-07-01
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electronic transport and Schottky barrier heights of Pt/n-type GaN Schottky diodes in the extrinsic region
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/1/10.1063/1.3158058
10.1063/1.3158058
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