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Ga-implantation in Ge: Electrical activation and clustering
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View: Figures


Image of FIG. 1.
FIG. 1.

Plan-view SEM images of Ge samples implanted with at 50 keV at (a) RT or (b) .

Image of FIG. 2.
FIG. 2.

SIMS profiles of Ga implanted at 50 keV, , with three different fluences: (dotted line), (dashed line), or (continuous line).

Image of FIG. 3.
FIG. 3.

Channeling RBS spectra for Ge samples implanted at 50 keV, , with (dotted line) or (closed circles). The spectrum of the sample after thermal annealing at for 1 h is also reported (open circles).

Image of FIG. 4.
FIG. 4.

SIMS profiles of (50 keV, ) as-implanted (continuous line), and after thermal annealing at (dashed-dotted line) and at (open squares).

Image of FIG. 5.
FIG. 5.

(a) Sheet resistance , (b) Hall carrier fluence, and (c) Hall mobility versus Ga fluence for Ga implanted at 50 keV, , and annealed in the temperature range.

Image of FIG. 6.
FIG. 6.

Maximum active Ga concentration vs annealing temperature for the three different fluences: (open squares), (closed circles), and (open triangles). The dashed line is the value of the maximum solid solubility calculated by Fistul.21

Image of FIG. 7.
FIG. 7.

Hall mobility vs active dopant concentration for Ga-doped Ge after thermal annealings up to (symbols). Dotted line is only a guide for eyes.

Image of FIG. 8.
FIG. 8.

Fraction of clusterized Ga vs the ratio Ga diffusion length to Ga–Ga distance for the different implanted and annealed samples (open circles). With continuous line is reported the fit of the data with the relation: .


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ga-implantation in Ge: Electrical activation and clustering