Plan-view SEM images of Ge samples implanted with at 50 keV at (a) RT or (b) .
SIMS profiles of Ga implanted at 50 keV, , with three different fluences: (dotted line), (dashed line), or (continuous line).
Channeling RBS spectra for Ge samples implanted at 50 keV, , with (dotted line) or (closed circles). The spectrum of the sample after thermal annealing at for 1 h is also reported (open circles).
SIMS profiles of (50 keV, ) as-implanted (continuous line), and after thermal annealing at (dashed-dotted line) and at (open squares).
(a) Sheet resistance , (b) Hall carrier fluence, and (c) Hall mobility versus Ga fluence for Ga implanted at 50 keV, , and annealed in the temperature range.
Maximum active Ga concentration vs annealing temperature for the three different fluences: (open squares), (closed circles), and (open triangles). The dashed line is the value of the maximum solid solubility calculated by Fistul.21
Hall mobility vs active dopant concentration for Ga-doped Ge after thermal annealings up to (symbols). Dotted line is only a guide for eyes.
Fraction of clusterized Ga vs the ratio Ga diffusion length to Ga–Ga distance for the different implanted and annealed samples (open circles). With continuous line is reported the fit of the data with the relation: .
Article metrics loading...
Full text loading...