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Temperature dependent and time-resolved photoluminescence studies of InAs self-assembled quantum dots with InGaAs strain reducing layer structure
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10.1063/1.3159648
/content/aip/journal/jap/106/1/10.1063/1.3159648
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/1/10.1063/1.3159648
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Cross-section schematic of InAs QDs embedded in GaAs matrix with an InGaAs SRL (Q2A and Q2B have no the InGaAs SRL).

Image of FIG. 2.
FIG. 2.

AFM images of InAs/GaAs QDs samples Q1A, Q1B, Q2A, and Q2B, respectively, all with the measured area of .

Image of FIG. 3.
FIG. 3.

PL spectra at 15 K for the four QDs samples; the insert is a PL spectrum of sample Q1A at 300 K.

Image of FIG. 4.
FIG. 4.

PL spectra for InAs QDs samples Q1A, Q1B, Q2A, and Q2B at different temperatures of 30–210 K, respectively.

Image of FIG. 5.
FIG. 5.

PL peak energies (a) and PL integrated intensity (b) for the four QDs samples at different temperatures.

Image of FIG. 6.
FIG. 6.

PL peak lifetimes of the four QDs samples at different temperatures; the insert is a typical decay spectrum of Q1A fitted by one exponential process.

Image of FIG. 7.
FIG. 7.

PL decay spectra of samples Q1B and sample Q2B at different temperatures.

Image of FIG. 8.
FIG. 8.

Time-resolved spectra of InAs/GaAs QDs sample Q1A at 16 K.

Image of FIG. 9.
FIG. 9.

Wavelength dependent PL lifetimes of (a) sample Q1A at 16 K and (b) sample Q2B at 120 K. The solid lines are PL spectra and the filled circular symbols are PL lifetimes measured at different detection wavelengths.

Image of FIG. 10.
FIG. 10.

Wavelength dependent PL lifetime of InAs/GaAs QDs sample Q2A at 70 and 180 K (the left is for PL spectrum and the right is for PL lifetime measured at different detection wavelength).

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/content/aip/journal/jap/106/1/10.1063/1.3159648
2009-07-08
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Temperature dependent and time-resolved photoluminescence studies of InAs self-assembled quantum dots with InGaAs strain reducing layer structure
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/1/10.1063/1.3159648
10.1063/1.3159648
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