Cross-section schematic of InAs QDs embedded in GaAs matrix with an InGaAs SRL (Q2A and Q2B have no the InGaAs SRL).
AFM images of InAs/GaAs QDs samples Q1A, Q1B, Q2A, and Q2B, respectively, all with the measured area of .
PL spectra at 15 K for the four QDs samples; the insert is a PL spectrum of sample Q1A at 300 K.
PL spectra for InAs QDs samples Q1A, Q1B, Q2A, and Q2B at different temperatures of 30–210 K, respectively.
PL peak energies (a) and PL integrated intensity (b) for the four QDs samples at different temperatures.
PL peak lifetimes of the four QDs samples at different temperatures; the insert is a typical decay spectrum of Q1A fitted by one exponential process.
PL decay spectra of samples Q1B and sample Q2B at different temperatures.
Time-resolved spectra of InAs/GaAs QDs sample Q1A at 16 K.
Wavelength dependent PL lifetimes of (a) sample Q1A at 16 K and (b) sample Q2B at 120 K. The solid lines are PL spectra and the filled circular symbols are PL lifetimes measured at different detection wavelengths.
Wavelength dependent PL lifetime of InAs/GaAs QDs sample Q2A at 70 and 180 K (the left is for PL spectrum and the right is for PL lifetime measured at different detection wavelength).
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