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Temperature dependent and time-resolved photoluminescence studies of InAs self-assembled quantum dots with InGaAs strain reducing layer structure
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10.1063/1.3159648
/content/aip/journal/jap/106/1/10.1063/1.3159648
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/1/10.1063/1.3159648
/content/aip/journal/jap/106/1/10.1063/1.3159648
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/content/aip/journal/jap/106/1/10.1063/1.3159648
2009-07-08
2014-11-27
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Temperature dependent and time-resolved photoluminescence studies of InAs self-assembled quantum dots with InGaAs strain reducing layer structure
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/1/10.1063/1.3159648
10.1063/1.3159648
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