(a) Schematic cross section of the test structure for -type GaN contacts to P3HT. (b) Optical micrograph of the patterned layer before the formation of the metal and P3HT layers.
Current-voltage characteristics for P3HT with contacts with a variety of spacings.
Current-voltage characteristics for P3HT with contacts.
Total resistance measured from the low voltage bias region of the current-voltage characteristics for P3HT with contacts formed from (circles) and (squares) epitaxial layers on and for P3HT films on with Au/Ni contacts (diamonds). The lines show the best linear fit to each series of resistances as a function of the contact spacing.
Total resistance as a function of electrode spacing for iodine-doped P3HT with (circles) and (squares) contacts.
Schematic band alignment at interfaces between GaN and P3HT. The vacuum level , ionization potential (IP), electron affinity (EA), and bandgap () are indicated.
Contact resistances for interfaces between undoped P3HT and , , and Au/Ni.
Article metrics loading...
Full text loading...