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Electrical properties of GaN/poly(3-hexylthiophene) interfaces
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10.1063/1.3159653
/content/aip/journal/jap/106/1/10.1063/1.3159653
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/1/10.1063/1.3159653

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic cross section of the test structure for -type GaN contacts to P3HT. (b) Optical micrograph of the patterned layer before the formation of the metal and P3HT layers.

Image of FIG. 2.
FIG. 2.

Current-voltage characteristics for P3HT with contacts with a variety of spacings.

Image of FIG. 3.
FIG. 3.

Current-voltage characteristics for P3HT with contacts.

Image of FIG. 4.
FIG. 4.

Total resistance measured from the low voltage bias region of the current-voltage characteristics for P3HT with contacts formed from (circles) and (squares) epitaxial layers on and for P3HT films on with Au/Ni contacts (diamonds). The lines show the best linear fit to each series of resistances as a function of the contact spacing.

Image of FIG. 5.
FIG. 5.

Total resistance as a function of electrode spacing for iodine-doped P3HT with (circles) and (squares) contacts.

Image of FIG. 6.
FIG. 6.

Schematic band alignment at interfaces between GaN and P3HT. The vacuum level , ionization potential (IP), electron affinity (EA), and bandgap () are indicated.

Tables

Generic image for table
Table I.

Contact resistances for interfaces between undoped P3HT and , , and Au/Ni.

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/content/aip/journal/jap/106/1/10.1063/1.3159653
2009-07-10
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical properties of GaN/poly(3-hexylthiophene) interfaces
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/1/10.1063/1.3159653
10.1063/1.3159653
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