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Enhanced efficiency of laser shock cleaning process by geometrical confinement of laser-induced plasma
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10.1063/1.3160315
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Affiliations:
1 Department of Mechanical Engineering, POSTECH, Pohang 790-784, Republic of Korea
2 Laser Engineering Group, IMT Co. Ltd., Uiwang 449-860, Republic of Korea
a) Author to whom correspondence should be addressed. Electronic mail: dskim87@postech.ac.kr.
J. Appl. Phys. 106, 014913 (2009)
/content/aip/journal/jap/106/1/10.1063/1.3160315
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/1/10.1063/1.3160315
View: Figures

## Figures

FIG. 1.

Structures for plasma confinement: (a) flat plate, (b) normal shock tube, and (c) converging shock tube.

FIG. 2.

Schematic diagram of the experimental setup.

FIG. 3.

Cleaning samples ( PS particles on Si wafers): (a) optical microscope image and (b) SEM image of a single PS particle.

FIG. 4.

Development of the LIP shock wave in the standard LSC process at (a) , (b) , and (c) . The gray scales are in arbitrary units.

FIG. 5.

Pressure distribution of various confining geometries (irradiance , scale bar: ): (a) plane confinement (, ), (b) normal shock tube (, , , ), and (c) converging shock tube (, , , , , ). The gray scales are in arbitrary units.

FIG. 6.

Maximum pressure as a function of gap distance at : (a) no confinement, (b) plane confinement , (c) plane confinement , (d) normal shock tube (, , , ), (e) normal shock tube (, , , ), (f) normal shock tube , , , ), and (g) converging shock tube (, , , , , ).

FIG. 7.

Development of the LIP shock wave for at (a) , (b) , and (c) . The gray scales are in arbitrary units.

FIG. 8.

Development of the LIP shock wave for at (a) 300, (b) 500, and (c) . The gray scales are in arbitrary units.

FIG. 9.

Pressure distribution on the sample surface for (a) no confinement and (b) plane confinement ( and ).

FIG. 10.

Maximum pressure acting on the sample surface: (a) no confinement , (b) , , and (c) , .

FIG. 11.

Measured peak pressure and the corresponding enhancement ratio as a function of the gap distance (, ).

FIG. 12.

Optical micrographs of Si-wafer surfaces after the LSC processes (20 pulses, , ): (a) no confinement, (b) plane confinement , (c) plane confinement , and (d) plane confinement .

/content/aip/journal/jap/106/1/10.1063/1.3160315
2009-07-14
2014-04-21

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