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Probing carrier injection into pentacene field effect transistor by time-resolved microscopic optical second harmonic generation measurement
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10.1063/1.3168434
/content/aip/journal/jap/106/1/10.1063/1.3168434
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/1/10.1063/1.3168434

Figures

Image of FIG. 1.
FIG. 1.

Optical configuration of the TRM-SHG measurement.

Image of FIG. 2.
FIG. 2.

Output characteristics of pentacene FETs with and . (a) Au-top and (b) Ag-top electrodes were used.

Image of FIG. 3.
FIG. 3.

Transfer characteristics of the same pentacene FETs in the saturated region at with (a) Au-top and (b) Ag-top electrodes.

Image of FIG. 4.
FIG. 4.

Total resistance in pentacene FETs as a function of channel length at . Circles: , triangles: , diamonds: , and squares: . Solid lines show fitting results of (a) Au-top and (b) Ag-top electrodes.

Image of FIG. 5.
FIG. 5.

Contact resistance evaluated from TLM measurement with Au-top and Ag-top electrodes.

Image of FIG. 6.
FIG. 6.

Decay of the normalized SH intensity near the source electrode dependent on applied voltage. Circles: , triangles: , diamonds: , and squares: . (a) Au-top and (b) Ag-top electrodes were used.

Image of FIG. 7.
FIG. 7.

Transient contact resistance as a function of the amplitude of applied voltage.

Image of FIG. 8.
FIG. 8.

Steady-state contact resistance as a function of the amplitude of applied voltage.

Tables

Generic image for table
Table I.

Calculated parameters for pentacene FETs with Au-top and Ag-top electrodes.

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/content/aip/journal/jap/106/1/10.1063/1.3168434
2009-07-15
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Probing carrier injection into pentacene field effect transistor by time-resolved microscopic optical second harmonic generation measurement
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/1/10.1063/1.3168434
10.1063/1.3168434
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