(a) AFM conductance (left) and height (right) images of a line pattern of GaMnAs drawn in GaAs:Mn–H using femtosecond laser pulses. The smooth topography of the height image indicates that negligible surface damage occurs upon femtosecond laser writing. A section profile of the conductance scan is shown below. (b) Similar measurement on dot patterns. Dot 1 exhibits FHWM .
Temperature dependence of four-point longitudinal resistance and magnetoresistance in Hall-bar pattern, indicating Curie temperature of 50 K. Magnetic fields are applied out of plane, along .
Magnetic field dependence of Hall resistance with field applied out of plane, measured at various temperatures in femtosecond laser-written Hall-bar pattern.
Magnetic anisotropy of the femtosecond laser-written Hall-bar pattern as revealed through magnetic field dependence of longitudinal resistance for magnetic field applied in the sample plane and out of the sample plane .
Conductance mapping of femtosecond laser-written Hall-bar patterns with beam blanking for various shutter times at the center position of the long bar.
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