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Ultrafast pulsed-laser dissociation of Mn–H complexes in GaAs
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) AFM conductance (left) and height (right) images of a line pattern of GaMnAs drawn in GaAs:Mn–H using femtosecond laser pulses. The smooth topography of the height image indicates that negligible surface damage occurs upon femtosecond laser writing. A section profile of the conductance scan is shown below. (b) Similar measurement on dot patterns. Dot 1 exhibits FHWM .

Image of FIG. 2.
FIG. 2.

Temperature dependence of four-point longitudinal resistance and magnetoresistance in Hall-bar pattern, indicating Curie temperature of 50 K. Magnetic fields are applied out of plane, along .

Image of FIG. 3.
FIG. 3.

Magnetic field dependence of Hall resistance with field applied out of plane, measured at various temperatures in femtosecond laser-written Hall-bar pattern.

Image of FIG. 4.
FIG. 4.

Magnetic anisotropy of the femtosecond laser-written Hall-bar pattern as revealed through magnetic field dependence of longitudinal resistance for magnetic field applied in the sample plane and out of the sample plane .

Image of FIG. 5.
FIG. 5.

Conductance mapping of femtosecond laser-written Hall-bar patterns with beam blanking for various shutter times at the center position of the long bar.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ultrafast pulsed-laser dissociation of Mn–H complexes in GaAs