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Enhancement of phosphorus activation in vacancy engineered thin silicon-on-insulator substrates
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10.1063/1.3262527
/content/aip/journal/jap/106/10/10.1063/1.3262527
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/10/10.1063/1.3262527
/content/aip/journal/jap/106/10/10.1063/1.3262527
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/content/aip/journal/jap/106/10/10.1063/1.3262527
2009-11-20
2015-09-02
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Enhancement of phosphorus activation in vacancy engineered thin silicon-on-insulator substrates
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/10/10.1063/1.3262527
10.1063/1.3262527
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