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H plasma cleaning and a-Si passivation of GaAs for surface channel device applications
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10.1063/1.3260251
/content/aip/journal/jap/106/11/10.1063/1.3260251
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/11/10.1063/1.3260251
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Spectral decomposition of high resolution As core level peaks acquired at 50° take off angle. (a) As received, (b) after HF dip, (c) after 5 min exposure to H plasma, and (d) after 20 min exposure to H plasma. The spectra have been normalized to the As bulk peak after background subtraction. Black lines As ; gray lines As .

Image of FIG. 2.
FIG. 2.

Spectral decomposition of high resolution Ga core level peaks acquired at 50° take off angle. (a) As received, (b) after HF dip, (c) after 5 min exposure to H plasma, (d) after 20 min exposure to H plasma, and (e) after Si deposition. The spectra have been normalized to the Ga bulk peak after background subtraction. Black lines Ga ; gray lines Ga .

Image of FIG. 3.
FIG. 3.

and peak-area ratios recorded on the oxide and the GaAs substrate after each cleaning step. The values have not been corrected for their sensitivity values.

Image of FIG. 4.
FIG. 4.

and peak-area ratios recorded on the oxide and the GaAs substrate after each cleaning step. Peak areas have been determined by peak fitting, as shown in Figs. 1 and 2.

Image of FIG. 5.
FIG. 5.

and atomic ratios of oxide and substrate after each cleaning step. The atomic ratios correspond to the XPS and peak-area ratios corrected for the element sensitivity factors.

Image of FIG. 6.
FIG. 6.

(a) Ga core level measured on a clean GaAs substrate; (b) Si and Ga core levels measured on a Si-passivated, H-cleaned GaAs; (c) Si and Ga lines measured after the deposition of 2 nm .

Image of FIG. 7.
FIG. 7.

CV characteristics of a p-MOSCAP annealed at in for 5 s. Measured at four frequencies, varying logarithmically from 100 Hz to 100 kHz, in the dark at .

Image of FIG. 8.
FIG. 8.

CV characteristics of an n-MOSCAP annealed at in for 5 s. Measured at four frequencies, varying logarithmically from 100 Hz to 100 kHz, in the dark at .

Image of FIG. 9.
FIG. 9.

CV characteristics of a p-MOSCAP annealed at in for 5 s. Measured at four frequencies, varying logarithmically from 100 Hz to 100 kHz, with peripheral illumination at .

Image of FIG. 10.
FIG. 10.

CV characteristics of an n-MOSCAP annealed at in for 5 s. Measured at four frequencies, varying logarithmically from 100 Hz to 100 kHz, with peripheral illumination at .

Image of FIG. 11.
FIG. 11.

Conductance measurements of the MBD -cleaned GaAs n-MOSCAP of Fig. 8. Measured in the dark at .

Image of FIG. 12.
FIG. 12.

Conductance measurements of the MBD -cleaned GaAs n-MOSCAP of Fig. 8. Measured in the dark at .

Image of FIG. 13.
FIG. 13.

distribution vs E position in the band gap extracted from conductance measurements at different temperatures, −40, 25, 60, and on n- and p-type MOSCAPs.

Image of FIG. 14.
FIG. 14.

(output) characteristic of MOSFET fabricated with W/MBD gate stack on H-cleaned GaAs.

Image of FIG. 15.
FIG. 15.

(transfer) characteristic of MOSFET fabricated with W/MBD gate stack on H-cleaned GaAs.

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/content/aip/journal/jap/106/11/10.1063/1.3260251
2009-12-10
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: H plasma cleaning and a-Si passivation of GaAs for surface channel device applications
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/11/10.1063/1.3260251
10.1063/1.3260251
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