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Carrier relaxation dynamics in nanowires grown by chemical vapor deposition
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View: Figures


Image of FIG. 1.
FIG. 1.

NWs grown directly on quartz with 0.6 nm of Au at using a ramp rate of .

Image of FIG. 2.
FIG. 2.

XRD spectrum of the NWs grown at .

Image of FIG. 3.
FIG. 3.

Optical transmission spectrum of NWs on quartz. The inset shows the square of the absorption vs energy providing an estimate for the band gap of the NWs. The extrapolated absorption edge is approximately 2.9 eV.

Image of FIG. 4.
FIG. 4.

Time resolved differential absorption of NWs with excitation at 3.8 eV (320 nm) and probed using different probing wavelengths. The inset displays transient data for probing photon energies smaller than the band gap of this material.

Image of FIG. 5.
FIG. 5.

Transient absorption intensity measurements of the NWs at excitation of 3.8 eV and probing wavelength at 370 nm. The inset in the upper right corner corresponds to the same data normalized to clearly show the identical temporal evolution at all fluences. Also shown in the inset is the linear behavior of the induced absorption with increasing fluences.

Image of FIG. 6.
FIG. 6.

A fit to the normalized transient absorption data of the NWs at excitation of 3.8 eV and probing wavelength 650 nm at absorption fluence of . The inset shows the fit to the data when probing at 370 nm. The fitted double exponential curves are shown as red lines.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Carrier relaxation dynamics in SnxNy nanowires grown by chemical vapor deposition