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Characterization of structure using a hafnium oxide as buffer layer for ferroelectric-gate field effect transistors
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10.1063/1.3267153
/content/aip/journal/jap/106/11/10.1063/1.3267153
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/11/10.1063/1.3267153
/content/aip/journal/jap/106/11/10.1063/1.3267153
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/content/aip/journal/jap/106/11/10.1063/1.3267153
2009-12-15
2014-08-02
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characterization of Pt/Bi3.15Nd0.85Ti3O12/HfO2/Si structure using a hafnium oxide as buffer layer for ferroelectric-gate field effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/11/10.1063/1.3267153
10.1063/1.3267153
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