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Characterization of structure using a hafnium oxide as buffer layer for ferroelectric-gate field effect transistors
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10.1063/1.3267153
/content/aip/journal/jap/106/11/10.1063/1.3267153
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/11/10.1063/1.3267153
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

XRD patterns of BNdT films deposited on Si and annealed at for 10 min.

Image of FIG. 2.
FIG. 2.

Cross-sectional TEM micrograph of (a) BNdT/Si and (c) ; cross-sectional HRTEM image of (b) BNdT/Si and (d) interface, the inset shows SAD pattern for BNdT film.

Image of FIG. 3.
FIG. 3.

AES depth profile of structure. The inset shows the AFM image of the BNdT film.

Image of FIG. 4.
FIG. 4.

characteristics of structure with different sweeping voltages. The inset shows the memory window as a function of thickness and the sweeping voltage.

Image of FIG. 5.
FIG. 5.

memory window measured near flatband, as a function of the number of switching cycles.

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/content/aip/journal/jap/106/11/10.1063/1.3267153
2009-12-15
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characterization of Pt/Bi3.15Nd0.85Ti3O12/HfO2/Si structure using a hafnium oxide as buffer layer for ferroelectric-gate field effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/11/10.1063/1.3267153
10.1063/1.3267153
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