XRD patterns of BNdT films deposited on Si and annealed at for 10 min.
Cross-sectional TEM micrograph of (a) BNdT/Si and (c) ; cross-sectional HRTEM image of (b) BNdT/Si and (d) interface, the inset shows SAD pattern for BNdT film.
AES depth profile of structure. The inset shows the AFM image of the BNdT film.
characteristics of structure with different sweeping voltages. The inset shows the memory window as a function of thickness and the sweeping voltage.
memory window measured near flatband, as a function of the number of switching cycles.
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