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Shape dependent carrier dynamics in InAs/GaAs nanostructures
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10.1063/1.3267851
/content/aip/journal/jap/106/11/10.1063/1.3267851
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/11/10.1063/1.3267851
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

AFM images of (a) QV1, (b) QV2, and (c) QR. The inset shows the surface morphology of the ring, which gives an outer diameter of , a height of , and an inner diameter of 30 nm.

Image of FIG. 2.
FIG. 2.

XTEM image of QR.

Image of FIG. 3.
FIG. 3.

(a) Continuous wave PL spectra of QD, QV1, QV2, and QR. (b) Excitation density dependence of PL from QR sample.

Image of FIG. 4.
FIG. 4.

Temperature dependence of PL transients from to 300 K at ground state energy of (a) QD, (b) QV1, (c) QV2, and (d) QR.

Image of FIG. 5.
FIG. 5.

Temperature dependence of the PL decay time of QD, QV1, QV2, and QR samples and the fitting result of the two-band model.

Image of FIG. 6.
FIG. 6.

Temperature dependence of PL transients from to 300 K at the first excited state energy of (a) QV1, (b) QV2, and (c) QR.

Image of FIG. 7.
FIG. 7.

Calculated electron energy levels in QD, QV, and QR by solving the one band energy-dependent effective mass equation.

Image of FIG. 8.
FIG. 8.

PL excitation spectra of QD (upper curve) and QR (lower curve) above the first excited state. The detection energy is fixed at the center of ground state energy.

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/content/aip/journal/jap/106/11/10.1063/1.3267851
2009-12-09
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Shape dependent carrier dynamics in InAs/GaAs nanostructures
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/11/10.1063/1.3267851
10.1063/1.3267851
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