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Layer-by-layer growth and magnetic properties of thin films on
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10.1063/1.3266004
/content/aip/journal/jap/106/12/10.1063/1.3266004
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/12/10.1063/1.3266004
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) A schematic epitaxial relation of (110) oriented (YIG) film on (GGG) substrate. For clarity, oxygen atoms are not shown. (b) Specular spot intensity in the RHEED pattern observed during YIG growth on (110)GGG substrate. One RHEED intensity oscillation corresponds to of , where is the lattice parameter .

Image of FIG. 2.
FIG. 2.

(420) reflections for films on substrates, where (a) and (b) are ⟨111⟩ oriented and (c) is ⟨110⟩ oriented. (a) is shown for comparison, where amorphous film was grown at room temperature and then annealed at , as described in Ref. 14, yielding in a relaxed structure. (b) and (c) show that the (420) reflection of as-deposited YIG films have same in-plane lattice constant with that of GGG, inducing pseudomorphic structure. The inset shows the orientation relationship where in (b) and for (c).

Image of FIG. 3.
FIG. 3.

Saturation magnetization of an as-grown film ( thick) on as a function of temperature. The signal from the substrate has been subtracted. The high temperature data were recorded by a PPMS with a magnetic field of , whereas the low temperature ones were measured using a MPMS under . In both cases, the magnetic field was applied in the film plane that is perpendicular to the ⟨111⟩ magnetically easy axis. The thin blue line is that for a bulk crystal (Ref. 8).

Image of FIG. 4.
FIG. 4.

Magnetization for films on (110) and (111) at and . The signal from the substrate was subtracted. In (a), has been applied along the axis of the YIG film and therefore lies in plane. In (b), the sample was rotated so that becomes parallel to the ⟨110⟩ axis and normal to the surface. In (c) and (d), the measurement configuration was same as in case (a) and (b), respectively, but for a ⟨111⟩ oriented sample. The orientation of to the crystallographic axis {110} or {111} is shown for each configuration.

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/content/aip/journal/jap/106/12/10.1063/1.3266004
2009-12-22
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Layer-by-layer growth and magnetic properties of Y3Fe5O12 thin films on Gd3Ga5O12
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/12/10.1063/1.3266004
10.1063/1.3266004
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