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Magnetic anisotropy in vertically aligned diluted magnetic Mn:Ge semiconductor nanowires
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View: Figures


Image of FIG. 1.
FIG. 1.

Typical SEM images of Mn:Ge nanowires vertically grown on Ge (111) substrate in a (a) 45°-tilted and (b) cross-section view. The inset of (b), the region indicated by a red square in (b), shows the vertical growth more clearly. (c) HRTEM image of the nanowire grown on Ge (111). SAED pattern in upper right of (c) confirms that the growth direction of the nanowires is [111].

Image of FIG. 2.
FIG. 2.

(a) The temperature-dependent XMCD data for vertically (red open circle) and randomly (black open square) grown Mn:Ge nanowires, respectively. The incident x-ray and external magnetic field are applied at the angle of 0° to the substrates for two samples. (b) The values calculated from the XAS and XMCD spectra with sum rules on various angles. Insets illustrate the experimental geometries.

Image of FIG. 3.
FIG. 3.

[(a) and (b)] RSM data using Mn:Ge nanowires grown on Ge (110) and (111) substrates, respectively. These results mean that the nanowires were epitaxially grown and the spacing of the plane of the nanowires inducting diffraction increases. (c) scan around (111) and (220) Bragg peak positions using Mn:Ge nanowires grown on Ge (111) substrate. Inset in the center of (c) shows the diffraction peak from the nanowires around (220) Bragg peak position in a magnified scale.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Magnetic anisotropy in vertically aligned diluted magnetic Mn:Ge semiconductor nanowires