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Thermal modeling and experimental study of infrared nanosecond laser ablation of silicon
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10.1063/1.3271413
/content/aip/journal/jap/106/12/10.1063/1.3271413
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/12/10.1063/1.3271413

Figures

Image of FIG. 1.
FIG. 1.

Schematic of the one-dimensional (1D) model.

Image of FIG. 2.
FIG. 2.

Schematic of the laser ablation experimental system.

Image of FIG. 3.
FIG. 3.

Comparison of model-predicted vaporization depth per pulse with experimentally measured ablation depth per pulse (ten pulses, 1064 nm, and 25 KHz pulse repetition rate).

Image of FIG. 4.
FIG. 4.

The variation of normalized laser beam intensity with the depth below the silicon surface (1064 nm, ; one laser pulse, which starts at ).

Image of FIG. 5.
FIG. 5.

The silicon target surface temperature variation with time (ten laser pulses and the tenth pulse starts at ; the high temperature at is due to the residual thermal effects of the first nine pulses; pulse repetition rate: 25 KHz).

Image of FIG. 6.
FIG. 6.

The long-term silicon target surface temperature variation with time (ten laser pulses and the tenth pulse ends at ; pulse repetition rate: 25 KHz).

Image of FIG. 7.
FIG. 7.

The silicon target temperature variation with at 200 ns after the start of one laser pulse at 1064 nm.

Image of FIG. 8.
FIG. 8.

Melting depth variation with time during the laser pulse (one laser pulse which starts at and ends at ).

Image of FIG. 9.
FIG. 9.

The long-term melting depth variation with time after the completion of one laser pulse at (laser pulse fluence: ).

Tables

Generic image for table
Table I.

Major properties of silicon used in simulation (Refs. 8 and 14–16).

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/content/aip/journal/jap/106/12/10.1063/1.3271413
2009-12-17
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Thermal modeling and experimental study of infrared nanosecond laser ablation of silicon
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/12/10.1063/1.3271413
10.1063/1.3271413
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