Schematic of the one-dimensional (1D) model.
Schematic of the laser ablation experimental system.
Comparison of model-predicted vaporization depth per pulse with experimentally measured ablation depth per pulse (ten pulses, 1064 nm, and 25 KHz pulse repetition rate).
The variation of normalized laser beam intensity with the depth below the silicon surface (1064 nm, ; one laser pulse, which starts at ).
The silicon target surface temperature variation with time (ten laser pulses and the tenth pulse starts at ; the high temperature at is due to the residual thermal effects of the first nine pulses; pulse repetition rate: 25 KHz).
The long-term silicon target surface temperature variation with time (ten laser pulses and the tenth pulse ends at ; pulse repetition rate: 25 KHz).
The silicon target temperature variation with at 200 ns after the start of one laser pulse at 1064 nm.
Melting depth variation with time during the laser pulse (one laser pulse which starts at and ends at ).
The long-term melting depth variation with time after the completion of one laser pulse at (laser pulse fluence: ).
Major properties of silicon used in simulation (Refs. 8 and 14–16).
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