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Direct measurement of local volume change in ion-irradiated and annealed SiC
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10.1063/1.3272808
/content/aip/journal/jap/106/12/10.1063/1.3272808
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/12/10.1063/1.3272808
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Cross-sectional BF TEM images of SiC: (a) irradiated with 2 MeV Pt to at 150 K and (b) following thermal annealing at 770 K.

Image of FIG. 2.
FIG. 2.

Depth profile of low energy loss spectra from the as-irradiated sample shown in Fig. 1. Plasmon peak positions corresponding to numbers 1 through 8 areas are redshifted from that of undamaged area (number 9).

Image of FIG. 3.
FIG. 3.

(a) Volume expansion and disorder profiles obtained from the as-irradiated sample shown in Fig. 1 and (b) volume expansion in the same as-irradiated and 770 K annealed samples, along with the local dose profile calculated using SRIM 2008 code for an ion fluence of .

Image of FIG. 4.
FIG. 4.

(a) Volume expansion profile obtained from EELS spectra and (b) relative disorder profiles for Si and C sublattices obtained using RBS/C for , , and samples.

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/content/aip/journal/jap/106/12/10.1063/1.3272808
2009-12-28
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Direct measurement of local volume change in ion-irradiated and annealed SiC
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/12/10.1063/1.3272808
10.1063/1.3272808
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