Cross-sectional BF TEM images of SiC: (a) irradiated with 2 MeV Pt to at 150 K and (b) following thermal annealing at 770 K.
Depth profile of low energy loss spectra from the as-irradiated sample shown in Fig. 1. Plasmon peak positions corresponding to numbers 1 through 8 areas are redshifted from that of undamaged area (number 9).
(a) Volume expansion and disorder profiles obtained from the as-irradiated sample shown in Fig. 1 and (b) volume expansion in the same as-irradiated and 770 K annealed samples, along with the local dose profile calculated using SRIM 2008 code for an ion fluence of .
(a) Volume expansion profile obtained from EELS spectra and (b) relative disorder profiles for Si and C sublattices obtained using RBS/C for , , and samples.
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