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Influence on the magnetoresistance of a spin valve due to the insertion of an ultrathin Gd layer in the free layer
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10.1063/1.3173580
/content/aip/journal/jap/106/2/10.1063/1.3173580
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/2/10.1063/1.3173580
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic of the multilayer stack composition. The total thickness of the Py free layer is constant . Note that when changes its value, effectively we are only displacing the Gd layer or the Fe/Gd/Fe trilayer within the thickness of the free layer. for all the samples with a trilayer Fe/Gd/Fe inserted and for the samples with a layer of Gd only inserted.

Image of FIG. 2.
FIG. 2.

MR values for samples with a 1 nm Gd layer inserted in the free layer (squares) at of the Cu spacer, compared with the test sample (circles) where , , and all equal to zero. Triangles represent samples where a 2 nm Gd layer is inserted in the free layer at of the Cu spacer. The insets show selected MR loops. Measurements (a) at 77 K and (b) at room temperature.

Image of FIG. 3.
FIG. 3.

MR values for samples with an Fe (1 nm)/Gd (1 nm)/Fe (1 nm) trilayer inserted in the free layer at of the Cu spacer (squares), compared with the test sample (circles) where Gd is removed from the inserted trilayer . Triangles represent samples with an Fe (1 nm)/Gd (2 nm)/Fe (1 nm) trilayer inserted in the free layer at of the Cu spacer. The insets show selected MR loops. Measurements (a) at 77 K and (b) at room temperature.

Image of FIG. 4.
FIG. 4.

Exchange bias field values at room temperature for all the samples used in this study. The values are smaller for most samples with an Fe layer inserted in the structure (empty symbols).

Image of FIG. 5.
FIG. 5.

Hysteresis loops for a sample with a 2 nm Fe layer inserted in the free layer at of the Cu spacer (left) and for a sample with a 2 nm Fe layer inserted in the pinned layer at of the Cu spacer (right).

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/content/aip/journal/jap/106/2/10.1063/1.3173580
2009-07-29
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence on the magnetoresistance of a spin valve due to the insertion of an ultrathin Gd layer in the free layer
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/2/10.1063/1.3173580
10.1063/1.3173580
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