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Displacement current analysis of carrier behavior in pentacene field effect transistor with poly(vinylidene fluoride and tetrafluoroethylene) gate insulator
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10.1063/1.3176487
/content/aip/journal/jap/106/2/10.1063/1.3176487
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/2/10.1063/1.3176487
/content/aip/journal/jap/106/2/10.1063/1.3176487
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/content/aip/journal/jap/106/2/10.1063/1.3176487
2009-07-23
2014-08-28
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Displacement current analysis of carrier behavior in pentacene field effect transistor with poly(vinylidene fluoride and tetrafluoroethylene) gate insulator
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/2/10.1063/1.3176487
10.1063/1.3176487
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