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Characteristics of InAs/GaNAs strain-compensated quantum dot solar cell
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10.1063/1.3176903
/content/aip/journal/jap/106/2/10.1063/1.3176903
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/2/10.1063/1.3176903
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic layer structure of a QDSC grown on a GaAs (001) substrate with ten multistacks of InAs QDs embedded with strain-compensating spacer layers.

Image of FIG. 2.
FIG. 2.

Cross-sectional STEM image of multistacked layers of InAs QDs embedded in 20-nm-thick strain-compensating spacer layers.

Image of FIG. 3.
FIG. 3.

Projected current-voltage curves measured for QDSCs with varying thickness and nitrogen composition of strain-compensating spacer layer: (a) and , (b) and , (c) and , and (d) and , respectively. The net strain-balanced condition was achieved in all samples and the solar radiation was a simulated air-mass 1.5 spectrum at 1 sun.

Image of FIG. 4.
FIG. 4.

Dependence of decrease in the open-circuit voltage (solid circle) of the QDSC and increase in the conduction-band offset at the heterointerface at both ends of the layer (solid line) as a function of nitrogen composition in . The schematic energy band structure of the QDSC is also shown in the inset.

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/content/aip/journal/jap/106/2/10.1063/1.3176903
2009-07-21
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characteristics of InAs/GaNAs strain-compensated quantum dot solar cell
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/2/10.1063/1.3176903
10.1063/1.3176903
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