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Effects of charged impurities and lattice defects on transport properties of nanoscale graphene structures
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10.1063/1.3176956
/content/aip/journal/jap/106/2/10.1063/1.3176956
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/2/10.1063/1.3176956
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Top view of the schema (a) and the Dirac point potential profile (b) of a typical two-terminal graphene system of width much larger than the length , . The slashed lines illustrate the linear dispersion law of charges around the -points. The Fermi level (blue dashed line) can be externally changed by an applied voltage.

Image of FIG. 2.
FIG. 2.

Conductivity as a function of Fermi energy for different values of the impurity density for two scattering mechanisms: (a) with vacancies, (b) and (c) with weakly/fully screened Coulomb ones. Insets show the real and imaginary parts of the self-energies.

Image of FIG. 3.
FIG. 3.

Charge mobility extracted for the ballistic transport regime (yellow solid curve), for the fully (red dashed curve) and weakly (gross-blue dot-dashed curve) screened Coulomb, and vacancy (blue solid curve) scattering mechanisms.

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/content/aip/journal/jap/106/2/10.1063/1.3176956
2009-07-29
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of charged impurities and lattice defects on transport properties of nanoscale graphene structures
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/2/10.1063/1.3176956
10.1063/1.3176956
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