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Threading dislocation evolution in patterned GaN nanocolumn growth and coalescence overgrowth
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10.1063/1.3176984
/content/aip/journal/jap/106/2/10.1063/1.3176984
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/2/10.1063/1.3176984

Figures

Image of FIG. 1.
FIG. 1.

SEM images of typical NCs in samples A (a), C (b), and D (c), and a typical cross-sectional SEM image of sample AO (d).

Image of FIG. 2.
FIG. 2.

(a) Normalized integrated PL intensity vs temperature of the NC samples A–D and the GaN template (sample E). (b) Normalized integrated PL intensity vs temperature of the overgrowth samples AO-DO and the GaN template (sample E).

Image of FIG. 3.
FIG. 3.

(a) Depth-dependent screw TD densities of samples AO-DO and E. (b) Depth-dependent edge TD densities of samples AO-DO and E. (c) Depth-dependent lateral domain size of samples AO-DO and E.

Image of FIG. 4.
FIG. 4.

Cross-sectional TEM image of sample A near an NC bottom. The terminations of two TDs are indicated with circles.

Image of FIG. 5.
FIG. 5.

Cross-sectional TEM image of sample C near an NC bottom.

Image of FIG. 6.
FIG. 6.

Cross-sectional TEM image of sample D near an NC bottom.

Image of FIG. 7.
FIG. 7.

Cross-sectional TEM image of sample AO. A top portion of the sample was removed during TEM sample preparation. Various TD features are indicated with circles.

Image of FIG. 8.
FIG. 8.

Cross-sectional TEM image of sample DO. Various TD features are indicated with circles.

Tables

Generic image for table
Table I.

Surface roughness, IQE, and near-surface XRD data of various samples.

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/content/aip/journal/jap/106/2/10.1063/1.3176984
2009-07-23
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Threading dislocation evolution in patterned GaN nanocolumn growth and coalescence overgrowth
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/2/10.1063/1.3176984
10.1063/1.3176984
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