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Towards an optimum coupling between Er ions and Si-based sensitizers for integrated active photonics
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10.1063/1.3177243
/content/aip/journal/jap/106/2/10.1063/1.3177243
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/2/10.1063/1.3177243

Figures

Image of FIG. 1.
FIG. 1.

Infrared absorption spectra of the layers deposited at , before and after annealing at the indicated annealing temperature , as recorded at Brewster angle. The inset shows a typical shift of the peak position for the as-grown sample at , in function of the power density applied on the Si target.

Image of FIG. 2.
FIG. 2.

Typical evolution of both Si excess and refractive index in function of the power density applied on the Si target, for the sample deposited at .

Image of FIG. 3.
FIG. 3.

Comparison of three PL spectra recorded on two samples deposited at , before and after annealing at , and a reference sample previously described in Refs. 11 and 15 and obtained by reactive cosputtering of a single silica layers topped by chips.

Image of FIG. 4.
FIG. 4.

(a) Variation of the Er PL intensity at in function of the Si excess, for the as-deposited at and annealing samples at the indicated temperatures . (b) Evolution of the Er emission lifetime in function of Si excess, for the same samples described in (a). The inset shows typical decay of normalized Er PL. The full line is the single exponential fit of the experimental data.

Image of FIG. 5.
FIG. 5.

Comparison of the variations of the Er PL intensity at in function of Si excess, for the samples deposited at the indicated substrate temperatures and then annealed at .

Image of FIG. 6.
FIG. 6.

(a) Variation of the Er PL intensity at in function of Si excess, for the samples doped with : as-deposited at and annealing samples at the indicated temperatures . (b) Variation of the Er emission lifetime in function of Si excess, for the samples of (a) as-deposited at and annealed between 500 and .

Image of FIG. 7.
FIG. 7.

Evolution of the Er emission lifetime in function of the annealing temperature for the sample deposited at and containing of Si excess and . The inset shows typical decay of normalized Er PL. The full line is the single exponential fit of the experimental data.

Image of FIG. 8.
FIG. 8.

Comparison of the variations of Er PL at against the excitation photon flux for the two best samples of the two series: the heavily doped sample annealed at and the moderately doped layer annealed at . Both samples were originally grown at .

Image of FIG. 9.
FIG. 9.

Evolution of the PL as a function of the annealing temperature for the two concentrations of Er content and for the two optimum values of Si excess.

Tables

Generic image for table
Table I.

Characteristics of the best samples in the heavily doped and moderaly Er-doped samples, labeled HD and MD, respectively. The reference R sample was obtained earlier by the reactive sputtering of a single cathode topped by chips, as described in Refs. 11 and 15. : substrate temperature; : refractive index; : annealing temperature; : time decay; : radiative lifetime; : effective excitation cross section.

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/content/aip/journal/jap/106/2/10.1063/1.3177243
2009-07-27
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Towards an optimum coupling between Er ions and Si-based sensitizers for integrated active photonics
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/2/10.1063/1.3177243
10.1063/1.3177243
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