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Enhanced domain contribution to ferroelectric properties in freestanding thick films
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10.1063/1.3181058
/content/aip/journal/jap/106/2/10.1063/1.3181058
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/2/10.1063/1.3181058
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematics of the experimental process for synthesizing (a) clamped and freestanding thick films, and (b) island structure.

Image of FIG. 2.
FIG. 2.

Clamped, island, and freestanding films exhibiting two kinds of clamping, one arising from the substrate and other from the inactive area of film.

Image of FIG. 3.
FIG. 3.

Plane and cross-sectional SEM images of [(a) and (b)] clamped and [(c) and (d)] freestanding thick films. (e) Optical microscopy picture of the island structure, and (f) Residual stress analysis of the clamped film shown in (a) and (b) using high resolution XRD. The stress was computed to be .

Image of FIG. 4.
FIG. 4.

(a) Dielectric constant and loss of clamped, island, and freestanding thick films, (b) loop comparison between clamped, island, and freestanding thick films under the sweep of 360 kV/cm with frequency of 100 Hz.

Image of FIG. 5.
FIG. 5.

PFM images: (a) clamped thick films and (b) freestanding thick films.

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/content/aip/journal/jap/106/2/10.1063/1.3181058
2009-07-28
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Enhanced domain contribution to ferroelectric properties in freestanding thick films
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/2/10.1063/1.3181058
10.1063/1.3181058
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