(a) Schematic diagram of tilted LNO wafer and the electrodes structure. The LNO (001) plane is tilted to the surface of the wafer with an angle of 10°. (b) Schematic diagram of the interdigitated electrodes configuration on untilted LNO (001) surface, where and represent the width and interspacing of the electrodes and .
A typical transient open-circuit photoelectric signal of tilted 10° LNO under an excitation of a 266 nm laser pulse of 25 ps duration and measured by oscilloscope with impedance. The LNO wafer is connected in parallel with a resistance. The inset shows the schematic circuit of the measurement.
The spectral response of untilted LNO wafer with width and interspacing interdigitated electrodes at 10 V bias. The absorption spectra of LNO single crystal are shown in the inset.
The photocurrent responsivity of untilted LNO wafer varies with the power density of Hg lamp. The sample is in series with a sampling resistance and measured at 10 V bias. The inset displays the schematic circuit of measurement. The solid line presented in the figure is a guide for eyes.
The bias dependence of photocurrent responsivity in untilted LNO under Hg lamp illumination. The inset shows a semilog scale of the variation in noise current with the bias which was measured under sunlight illumination. The solid line presented in the figure is a guide for eyes.
Transient photoresponses of untilted LNO under the excitation of 266 nm pulsed laser with 25 ps duration at 5, 10, 20, and 30 V biases, respectively. A resistance connected in parallel with the LNO wafer and photovoltages were measured by a 2.5 GHz bandwidth oscilloscope. The inset shows the bias dependence of photovoltages under 266 nm pulsed laser illumination.
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