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Photoelectric effects of ultraviolet fast response and high sensitivity in single crystal
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10.1063/1.3183957
/content/aip/journal/jap/106/2/10.1063/1.3183957
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/2/10.1063/1.3183957
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic diagram of tilted LNO wafer and the electrodes structure. The LNO (001) plane is tilted to the surface of the wafer with an angle of 10°. (b) Schematic diagram of the interdigitated electrodes configuration on untilted LNO (001) surface, where and represent the width and interspacing of the electrodes and .

Image of FIG. 2.
FIG. 2.

A typical transient open-circuit photoelectric signal of tilted 10° LNO under an excitation of a 266 nm laser pulse of 25 ps duration and measured by oscilloscope with impedance. The LNO wafer is connected in parallel with a resistance. The inset shows the schematic circuit of the measurement.

Image of FIG. 3.
FIG. 3.

The spectral response of untilted LNO wafer with width and interspacing interdigitated electrodes at 10 V bias. The absorption spectra of LNO single crystal are shown in the inset.

Image of FIG. 4.
FIG. 4.

The photocurrent responsivity of untilted LNO wafer varies with the power density of Hg lamp. The sample is in series with a sampling resistance and measured at 10 V bias. The inset displays the schematic circuit of measurement. The solid line presented in the figure is a guide for eyes.

Image of FIG. 5.
FIG. 5.

The bias dependence of photocurrent responsivity in untilted LNO under Hg lamp illumination. The inset shows a semilog scale of the variation in noise current with the bias which was measured under sunlight illumination. The solid line presented in the figure is a guide for eyes.

Image of FIG. 6.
FIG. 6.

Transient photoresponses of untilted LNO under the excitation of 266 nm pulsed laser with 25 ps duration at 5, 10, 20, and 30 V biases, respectively. A resistance connected in parallel with the LNO wafer and photovoltages were measured by a 2.5 GHz bandwidth oscilloscope. The inset shows the bias dependence of photovoltages under 266 nm pulsed laser illumination.

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/content/aip/journal/jap/106/2/10.1063/1.3183957
2009-07-29
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photoelectric effects of ultraviolet fast response and high sensitivity in LiNbO3 single crystal
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/2/10.1063/1.3183957
10.1063/1.3183957
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