Schematic illustration of (a) MIM and (b) IDT capacitor test structures for measuring, respectively, the out-of-plane and in-plane dielectric properties of BST thin films.
XRD scans of the BST thin films that were prepared in different capacitor configurations of MIM and IDT , and were annealed at temperatures 600 and , respectively.
Cross-sectional SEM images of the annealed BST thin films grown on (a) and (b) . Note that the magnification is slightly different for these two SEM images.
Dielectric constant as a function of the applied dc electric field for the BST films annealed at 600, 650, and . Note that all the measurements were carried out at 300 K and 100 kHz.
Dielectric constant and loss tangent as functions of the measurement frequency for the BST films annealed at with MIM and IDT configurations.
Qualitative comparison of the theoretical calculations of dielectric constant with the experimental results.
Dielectric constant as a function of the applied dc electric field for the annealed BST films with different thicknesses in MIM configuration. The inset shows the as a function of the BST film thickness from 50 to 800 nm, in which the solid line is a linear fit to the data.
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