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Thermal strain-induced dielectric anisotropy in thin films grown on silicon-based substrates
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10.1063/1.3186019
/content/aip/journal/jap/106/2/10.1063/1.3186019
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/2/10.1063/1.3186019
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic illustration of (a) MIM and (b) IDT capacitor test structures for measuring, respectively, the out-of-plane and in-plane dielectric properties of BST thin films.

Image of FIG. 2.
FIG. 2.

XRD scans of the BST thin films that were prepared in different capacitor configurations of MIM and IDT , and were annealed at temperatures 600 and , respectively.

Image of FIG. 3.
FIG. 3.

Cross-sectional SEM images of the annealed BST thin films grown on (a) and (b) . Note that the magnification is slightly different for these two SEM images.

Image of FIG. 4.
FIG. 4.

Dielectric constant as a function of the applied dc electric field for the BST films annealed at 600, 650, and . Note that all the measurements were carried out at 300 K and 100 kHz.

Image of FIG. 5.
FIG. 5.

Dielectric constant and loss tangent as functions of the measurement frequency for the BST films annealed at with MIM and IDT configurations.

Image of FIG. 6.
FIG. 6.

Qualitative comparison of the theoretical calculations of dielectric constant with the experimental results.

Image of FIG. 7.
FIG. 7.

Dielectric constant as a function of the applied dc electric field for the annealed BST films with different thicknesses in MIM configuration. The inset shows the as a function of the BST film thickness from 50 to 800 nm, in which the solid line is a linear fit to the data.

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/content/aip/journal/jap/106/2/10.1063/1.3186019
2009-07-29
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Thermal strain-induced dielectric anisotropy in Ba0.7Sr0.3TiO3 thin films grown on silicon-based substrates
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/2/10.1063/1.3186019
10.1063/1.3186019
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