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Ambient induced degradation and chemically activated recovery in copper phthalocyanine thin film transistors
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10.1063/1.3159885
/content/aip/journal/jap/106/3/10.1063/1.3159885
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/3/10.1063/1.3159885
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic cross section of device structures (a) with a thin CuPc layer and (b) with a thick CuPc layer. The electrodes consist of 45 interdigitated fingers, with a channel length and channel width of ; .

Image of FIG. 2.
FIG. 2.

AFM images of surfaces for (a) 4 ML CuPc (rms roughness: 0.7 nm, average grain size: 21.1 nm), and (b) 1000 ML CuPc (rms roughness: 62.1 nm, average grain size: 52.7 nm).

Image of FIG. 3.
FIG. 3.

Output characteristics of 4 ML CuPc [(a)–(c)] vs 1000 ML CuPc [(d)–(f)] OTFTs. [(a) and (d)] as-prepared fresh devices, [(b) and (e)] after aging in the ambient air for 14 days (average relative humidity ), [(c) and (f)] after 4 days in a high vacuum chamber. Transfer data for 4 ML CuPc (h) and 1000 ML CuPc (g).

Image of FIG. 4.
FIG. 4.

On-state current ( at , ) with different CuPc thickness before aging (fresh) and after aging in ambient air for 14 days. Some error bars are less than the size of the data points.

Image of FIG. 5.
FIG. 5.

(a) On-state current (normalized to ) and (b) off-state current (normalized to ) for 1000 ML CuPc OTFTs under environment cycle 1 [environment I— with 30% relative humidity (3.5 h); environment II—pure (13 h); environment III—clean dry air (17 h)] and environment cycle 2 [environment —clean air with 30% relative humidity (3.5 h); environment II—pure (13 h); environment III—clean dry air (17 h)]. The output characteristics are shown at four points along cycle 1: (c) at the starting point where devices have been in the ambient air for 45 min after deposition, labeled “start,” (d) after exposure under environment I, labeled “first” (the inset shows the data on a smaller scale) (e) after exposure under environment II, labeled “second,” and (f) after exposure under environment III, labeled “third.” The gate voltage steps are in increments of −2 V and the experiment was performed at room temperature.

Image of FIG. 6.
FIG. 6.

(a) On-state current at , during the recovery test under 30% relative humidity with clean air for 48 h and clean dry air for 24 h, and (b) Off-state current at , during the recovery test under 30% relative humidity with clean air for 48 h and clean dry air for 24 h. (c) Output characteristics of aged 1000 ML CuPc OTFTs under ambient air (d) output characteristics of aged 1000 ML CuPc OTFTs after exposure under 30% relative humidity with clean air for 48 h and clean dry air for 24 h The gate voltage steps are in increments of −2 V and the experiment was performed at room temperature.

Image of FIG. 7.
FIG. 7.

(a) Drain-source current at , in clean dry air for 41 h, (b) drain-source current at , in clean dry air for 41 h. (c) Output characteristics of aged 1000 ML CuPc OTFTs under ambient air and (d) output characteristics of aged 1000 ML CuPc OTFTs after exposure to clean dry air for 41 h. The drain-source current in clean dry air does not change significantly. The gate voltage steps are in increments of −2 V and the experiment was performed at room temperature.

Image of FIG. 8.
FIG. 8.

(a) On-state current for 1000 ML CuPc OTFT exposed to 1 ppm ; (b) off-state current for 1000 ML CuPc OTFT exposed to 1 ppm . (c) Output characteristics of a fresh 1000 ML OTFT exposed to ambient conditions for (the inset shows the data on a smaller scale). (d) Output characteristics of the same device after 900 min exposure to the 1 ppm environment. The gate voltage steps are in increments of −2 V and the experiment was performed at room temperature.

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/content/aip/journal/jap/106/3/10.1063/1.3159885
2009-08-12
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ambient induced degradation and chemically activated recovery in copper phthalocyanine thin film transistors
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/3/10.1063/1.3159885
10.1063/1.3159885
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