(a) Schematic image of the cobalt Hall bar containing an antidot array. (b) SEM image of sample 3. (c) Magnified SEM image of sample 3 at the arm crossing region with a unit cell highlighted. (d) Magnified SEM image of sample 4 (unit cell highlighted).
Stable states of the micromagnetic configuration of an antidot array during magnetization reversal. The sample area is with and . The applied magnetic field saturates the magnetization along the direction. (a) and (b) are different geometries with the easy axis along and , respectively. The circled numbered areas illustrate the (antivortex) (A to C) and 180° (D), and 90° (E and F) domain walls.
The in-plane longitudinal MR characteristic at . See Table I for a summary of the sample parameters.
The in-plane transverse MR characteristic at . See Table I for a summary of the sample parameters.
The coercive field and MR ratio with respect to the antidot areal density. Sample 4 has special symbols to differentiate it from other samples with square lattice.
The in-plane longitudinal MR of sample 3. Insets A–F are the schematics of the magnetization configurations in a section of the antidot arrays at different ( sweeps from positive to the negative side). Inset G is the schematic of the current density distribution. Inset H is the magnified plot in the field range of with Barkhausen jumps.
A summary of the sample dimensions. Antidot areal density is defined as follows: antidot area in a unit cell/unit cell for square lattice antidot arrays.
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