1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Observation of strain in pseudomorphic by tracking phonon participation in resonant interband tunnel diodes via electron tunneling spectroscopy
Rent:
Rent this article for
USD
10.1063/1.3187832
/content/aip/journal/jap/106/3/10.1063/1.3187832
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/3/10.1063/1.3187832

Figures

Image of FIG. 1.
FIG. 1.

(a) The structures of the RITDs, referred to as structures with , incorporating a layer and a nm Si layer in the composite tunneling barrier. (b) The cross section of a RITD with two bonding pads. The gray areas are , and the black areas are contact metal. (c) A photograph of a completed device following packaging and wire bonding.

Image of FIG. 2.
FIG. 2.

characteristics of a diameter RITD using the structure with measured at room temperature and . Two weak inflections due to phonons are observable in the curve measured at . The inset is the room-temperature curve measured over a wider voltage range, displaying a negative-differential-resistance region which is characteristic of a tunnel diode.

Image of FIG. 3.
FIG. 3.

Measured phonon spectrum of an RITD with the structure and the Gaussian peak fit to the measured peak at .

Image of FIG. 4.
FIG. 4.

Measured phonon spectrum of an RITD with the structure and the Gaussian peak fit to the measured peak at .

Image of FIG. 5.
FIG. 5.

Measured phonon spectrum of an RITD using the structure and the Gaussian peak fit to the measured peak at .

Image of FIG. 6.
FIG. 6.

Measured phonon spectrum of an RITD using the structure and that of a commercial Si Esaki tunnel diode. The nearly complete overlap indicates that the measured phonon spectrum of the RITD structure was almost completely dominated by the Si phonons. In addition, the agreement between the measured Si phonon spectrum and that reported by Logan et al. (Ref. 26) confirms the accuracy of the phonon spectra obtained in this experiment. Further, the RITD structure did not suffer from appreciable voltage shift due to series resistance mainly because it exhibited the lowest current density of the RITDs measured in this experiment.

Image of FIG. 7.
FIG. 7.

Scatter plot of fitted Si TA phonon energy (solid circles) and TA phonon energy (open triangles) vs current at the Si TA phonon peak. Upshift of phonon energies due to contact resistance is shown. The convergence of both Si TA phonon and TA phonon energies at low current levels indicates that the effect of contact resistance was negligible at these current levels. The agreement of measured low current Si TA phonon energy with previously reported data leads to a determination of about for the TA phonon energy in this experiment.

Tables

Generic image for table
Table I.

Results of least-squares fit with two Gaussian peaks to the measured phonon peaks at for diodes of various structures and diameters. The fitting function is , where is a predetermined offset, and , , , , , and are fitting parameters. The corresponding current at the Si TA phonon peak, which is related to the measured phonon peak shift due to series resistance, is listed in the last column.

Loading

Article metrics loading...

/content/aip/journal/jap/106/3/10.1063/1.3187832
2009-08-10
2014-04-25
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Observation of strain in pseudomorphic Si1−xGex by tracking phonon participation in Si∕SiGe resonant interband tunnel diodes via electron tunneling spectroscopy
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/3/10.1063/1.3187832
10.1063/1.3187832
SEARCH_EXPAND_ITEM