1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The interfacial thermal conductance between a vertical single-wall carbon nanotube and a silicon substrate
Rent:
Rent this article for
USD
10.1063/1.3191673
/content/aip/journal/jap/106/3/10.1063/1.3191673
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/3/10.1063/1.3191673
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) MD model of the silicon-CNT system without any chemical bond. (b) A typical steady-state temperature profile.

Image of FIG. 2.
FIG. 2.

(a) MD model of the silicon-CNT system with 10 chemical bonds. (b) A typical steady-state temperature profile.

Image of FIG. 3.
FIG. 3.

Interfacial thermal conductance as a function of chemical bond number at the silicon-CNT interface.

Image of FIG. 4.
FIG. 4.

DOS calculated for Si atoms in the substrate and C atoms in CNT forming the silicon-CNT interface (a) with two chemical bonds, (b) with six chemical bonds, and (c) with ten chemical bonds.

Image of FIG. 5.
FIG. 5.

Interfacial thermal conductance as a function of chain length for atoms in molecule backbone at the silicon-CNT interface.

Loading

Article metrics loading...

/content/aip/journal/jap/106/3/10.1063/1.3191673
2009-08-10
2014-04-21
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The interfacial thermal conductance between a vertical single-wall carbon nanotube and a silicon substrate
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/3/10.1063/1.3191673
10.1063/1.3191673
SEARCH_EXPAND_ITEM