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Defects in virgin hydrothermally grown -type ZnO studied by temperature dependent Hall effect measurements
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10.1063/1.3168488
/content/aip/journal/jap/106/4/10.1063/1.3168488
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/4/10.1063/1.3168488

Figures

Image of FIG. 1.
FIG. 1.

Carrier concentrations corrected for the contact size and the -factor vs the reciprocal absolute temperature for samples A, B, and C. The solid curves are fit to the experimental data.

Image of FIG. 2.
FIG. 2.

(a) The experimental data corrected for the contact size and the -factor (squares) and the resulting simulations curves (solid line) obtained by considering all the scattering processes. In the inset the dependence of the -factor on the temperature is reported. (b) The individual contributions from the different scattering processes to the mobility assuming independent processes, for clarity results are shown for sample B only, but similar results hold also for the samples A and C.

Image of FIG. 3.
FIG. 3.

Conductance normalized by the probing angular frequency vs temperature obtained by TAS after depositing Schottky contacts on the samples A, B, and C. For sample A, results are included from two different contacts 1 and 2 in order to illustrate the sample nonuniformity. The measurements shown were taken with .

Image of FIG. 4.
FIG. 4.

Comparison of the Li content determined by SIMS measurements and the compensating center concentration estimated by modeling for the three different samples used.

Tables

Generic image for table
Table I.

ZnO constants used in the TDH measurements analysis.

Generic image for table
Table II.

Al, Ga, In, Li, Na, and K concentrations in for samples A, B, and C, as determined by SIMS.

Generic image for table
Table III.

Donor concentrations, activation energies, and for the samples A, B, and C. Concentrations are in and activation energies in meV. In case of for the samples A and B, the range of possible values obtained by varying within the experimental uncertainty are given.

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/content/aip/journal/jap/106/4/10.1063/1.3168488
2009-08-25
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Defects in virgin hydrothermally grown n-type ZnO studied by temperature dependent Hall effect measurements
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/4/10.1063/1.3168488
10.1063/1.3168488
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