Carrier concentrations corrected for the contact size and the -factor vs the reciprocal absolute temperature for samples A, B, and C. The solid curves are fit to the experimental data.
(a) The experimental data corrected for the contact size and the -factor (squares) and the resulting simulations curves (solid line) obtained by considering all the scattering processes. In the inset the dependence of the -factor on the temperature is reported. (b) The individual contributions from the different scattering processes to the mobility assuming independent processes, for clarity results are shown for sample B only, but similar results hold also for the samples A and C.
Conductance normalized by the probing angular frequency vs temperature obtained by TAS after depositing Schottky contacts on the samples A, B, and C. For sample A, results are included from two different contacts 1 and 2 in order to illustrate the sample nonuniformity. The measurements shown were taken with .
Comparison of the Li content determined by SIMS measurements and the compensating center concentration estimated by modeling for the three different samples used.
ZnO constants used in the TDH measurements analysis.
Al, Ga, In, Li, Na, and K concentrations in for samples A, B, and C, as determined by SIMS.
Donor concentrations, activation energies, and for the samples A, B, and C. Concentrations are in and activation energies in meV. In case of for the samples A and B, the range of possible values obtained by varying within the experimental uncertainty are given.
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