Material quality factor for GaAs, GaP, InSb, PbTe, Ag, and Au at room temperature. All semiconductors are intrinsic.
Normalized wavevector (effective index) vs frequency for the lowest order TM mode on a GaP cylinder of radii , 250, 500, and 1000 nm in a vacuum environment . The region where has been omitted.
Geometric progression of spheres in self-similar structures whose total lengths are fixed. The coordinate axis identifying plane wave illumination wavevector and polarization is indicated. The geometric parameters of structures (a)–(d) are given in Table I.
Spatial variation of external electric field amplitude on logarithimic scale for a GaP self-similar structure in the -plane (i.e., incident plane) with , , , , and . The inset gives electric field amplitude in the vicinity of the central bisphere. Time-average Poynting vector flow lines originating from an incident plane wavefront are indicated with dotted lines.
Focal spot electric field enhancement for GaP self-similar structures with varying particle spacing/radius ratio . The cases of and with total lengths fixed to are shown.
Focal spot electric field enhancement for GaP self-similar structures with varying particle number , with fixed length and central sphere radius (, , ).
Enhancement of near-field at focal point for GaP self-similar structures with total lengths varying as fractions of the resonant wavelength. The cases of and with fixed particle spacing/radius ratio are shown.
Absorption and scattering efficiencies (on logarithimic scale) for GaP self-similar structure with , , . The case of is shown.
Summary of the self-similar structure geometry parameters that are used in this study.
Values of smallest sphere radius (in nanometers) as a function of the total length of the self-similar structure composed of GaP and particle spacing/radius ratio for the central bisphere.
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