Schematic illustration of Mn diffusion from a ferromagnetic layer to a neighboring nonmagnetic GaAs layer and its effect on injection of spin-polarized carriers from the region. Mn atoms diffused into the nonmagnetic GaAs layer will be in a paramagnetic phase, with random spin orientations and cause spin scattering as well as charge scattering of the carriers, reducing spin injection efficiency. (Mn atoms are designated by circled arrows and carriers are designated by plain arrows.)
ToF-SIMS intensity-depth profiles of the sample (a) as-grown and (b) after annealing for 60 min at , illustrating the diffusion of Mn and In.
(a) Overlay of ToF-SIMS concentration-depth profiles of as-grown and annealed sample showing diffusion of Mn into the GaAs capping layer. (b) Overlay plot of error function fits to the profiles shown in Fig. 3(a) after subtraction of the as-grown interface width, and Arrhenius plot showing correlation between diffusion coefficients and temperature.
Smoothed ToF-SIMS concentration-depth profiles of the ion-implanted sample (a) before and after annealing at and (b) after annealing at 400 and for 120 min.
ToF-SIMS concentration-depth profiles of the ion-implanted sample (a) before and after annealing at and (b) after annealing at 350, 400, and for 120 min.
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