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Diffusion of Mn in GaAs studied by quantitative time-of-flight secondary ion mass spectrometry
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10.1063/1.3200961
/content/aip/journal/jap/106/4/10.1063/1.3200961
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/4/10.1063/1.3200961
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Figures

Image of FIG. 1.
FIG. 1.

Schematic illustration of Mn diffusion from a ferromagnetic layer to a neighboring nonmagnetic GaAs layer and its effect on injection of spin-polarized carriers from the region. Mn atoms diffused into the nonmagnetic GaAs layer will be in a paramagnetic phase, with random spin orientations and cause spin scattering as well as charge scattering of the carriers, reducing spin injection efficiency. (Mn atoms are designated by circled arrows and carriers are designated by plain arrows.)

Image of FIG. 2.
FIG. 2.

ToF-SIMS intensity-depth profiles of the sample (a) as-grown and (b) after annealing for 60 min at , illustrating the diffusion of Mn and In.

Image of FIG. 3.
FIG. 3.

(a) Overlay of ToF-SIMS concentration-depth profiles of as-grown and annealed sample showing diffusion of Mn into the GaAs capping layer. (b) Overlay plot of error function fits to the profiles shown in Fig. 3(a) after subtraction of the as-grown interface width, and Arrhenius plot showing correlation between diffusion coefficients and temperature.

Image of FIG. 4.
FIG. 4.

Smoothed ToF-SIMS concentration-depth profiles of the ion-implanted sample (a) before and after annealing at and (b) after annealing at 400 and for 120 min.

Image of FIG. 5.
FIG. 5.

ToF-SIMS concentration-depth profiles of the ion-implanted sample (a) before and after annealing at and (b) after annealing at 350, 400, and for 120 min.

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/content/aip/journal/jap/106/4/10.1063/1.3200961
2009-08-18
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Diffusion of Mn in GaAs studied by quantitative time-of-flight secondary ion mass spectrometry
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/4/10.1063/1.3200961
10.1063/1.3200961
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