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Time dependent dielectric breakdown of amorphous high- dielectric used in dynamic random access memory metal-insulator-metal capacitor
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10.1063/1.3204001
/content/aip/journal/jap/106/4/10.1063/1.3204001
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/4/10.1063/1.3204001
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Temperature dependent characteristics with monitor current measured at a fixed low voltage.

Image of FIG. 2.
FIG. 2.

Leakage current transients during long-term CVS measurements at for selected stress voltages. The monitor voltages are 1.8 and −1.6 V, respectively, for (a) positive bias and (b) negative bias on BE.

Image of FIG. 3.
FIG. 3.

Weibull distributions of the hard breakdown measured at for (a) positive bias and (b) negative bias on BE.

Image of FIG. 4.
FIG. 4.

Voltage acceleration results from long-term CVS measurements at , showing an almost symmetric depending on the polarity of the bias voltage. The data can be fitted well using the power-law model. The inset figure shows the fitting to linear- model in high and low voltage regions, respectively.

Image of FIG. 5.
FIG. 5.

Voltage acceleration measured at 30, 75, and , showing an increase in acceleration parameter, (1/V), with decreasing temperature. Solid lines represent fitting to the linear- model.

Image of FIG. 6.
FIG. 6.

Stress voltage dependence of the apparent activation energy of TDDB lifetime, showing an increase in with decreasing stress voltage.

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/content/aip/journal/jap/106/4/10.1063/1.3204001
2009-08-26
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Time dependent dielectric breakdown of amorphous ZrAlxOy high-k dielectric used in dynamic random access memory metal-insulator-metal capacitor
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/4/10.1063/1.3204001
10.1063/1.3204001
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