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Resistance switching effect in Nb-doped (100) bicrystal with (100) twist boundary
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View: Figures


Image of FIG. 1.
FIG. 1.

The schematic illustration of fabricating procedures and the photograph of bicrystal with (100) twist boundary.

Image of FIG. 2.
FIG. 2.

The TEM images of the bicrystal. (a) is the cross-sectional TEM images in the low magnification and (b) is the HR-TEM image near the twist boundary. The arrows indicate the direction of twist boundary.

Image of FIG. 3.
FIG. 3.

Typical characteristics of single crystal and the bicrystal with (100) and twist boundary and capacitance measurement results. (a) shows the characteristics. (b) and (c) show the capacitance and dielectric loss and characteristics of the bicrystal with (100) twist boundary cooled at the rate of −100 K/h, respectively.

Image of FIG. 4.
FIG. 4.

The characteristics plotted on the semilogarithmic current scale of the bicrystals cooled by (a) −100 and (b) −300 K/h. The arrows in the figure indicate the direction of voltage sweeping.

Image of FIG. 5.
FIG. 5.

Typical electric field-induced resistance switching and retention properties of the bicrystal cooled by −300 K/h. (a) shows the resistance switching behaviors by the application of voltage pulses and (b) shows the resistance memory effect of both the resistance states at room temperature.

Image of FIG. 6.
FIG. 6.

The TEM image and EELS spectra of -edge measured near the twist boundary and in the bulk region. Open circles marked A and B denote the area for the EELS measurements.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Resistance switching effect in Nb-doped SrTiO3 (100) bicrystal with (100) ∼45° twist boundary