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Electron transport in surface oxidized Si nanocrystal ensembles with thin film transistor structure
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10.1063/1.3204669
/content/aip/journal/jap/106/4/10.1063/1.3204669
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/4/10.1063/1.3204669
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic diagram of the device structure based on SiNCs, (b) schematic diagram of the interdigital electrode structure fabricated by highly doped SOI layer, and (c) scanning electron micrograph of SiNC films and the inset is the transmission electron microscopy image of one SiNC.

Image of FIG. 2.
FIG. 2.

(a) dependence of modulated by various from −10 to 40 V, measured at room temperature. The inset is characteristics of structure. (b) Channel length dependence of for devices with structures of Al/SiNCs/Al and .

Image of FIG. 3.
FIG. 3.

A fit of (red line) to the data shown in Fig. 2(b)

Image of FIG. 4.
FIG. 4.

(a) dependence of conductance with various temperatures at . (b) dependence of the conductance with various temperatures at . (c) Temperature dependence of the conductance obtained from Figs. 4(a) and 4(b) by extrapolating conductance to . The is gained by extrapolating conductance, shown in Fig. 4(b), in region 1–5 V to . The and are gained by extrapolating conductance, shown in Fig. 4(a), in region 1–2 V and 2.3–5 V to .

Image of FIG. 5.
FIG. 5.

(a) Band diagram of SiNC/oxide shell multitunnel junctions when devices are applied . (b) Enlarging band diagram of the SiNC/oxide shell interface, without and with being applied . Here, we suppose that all the traps exist at the interface between SiNC and oxide shell.

Image of FIG. 6.
FIG. 6.

After hydrogen annealing treatment, (a) dependence of conductance with various temperatures at . (b) dependence of the conductance with various temperatures at . (c) Temperature dependence of the conductance obtained from Fig. 6(b) by extrapolating conductance (in the region 1–3.5 V) to .

Image of FIG. 7.
FIG. 7.

dependence of at , with various temperatures. The inset is the temperature dependence of the threshold voltage.

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/content/aip/journal/jap/106/4/10.1063/1.3204669
2009-08-26
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electron transport in surface oxidized Si nanocrystal ensembles with thin film transistor structure
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/4/10.1063/1.3204669
10.1063/1.3204669
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