The conduction-band edge calculated for an AlGaN/GaN HEMT with Ga-face polarity. In the plots are also reported the subband energies, the envelope wave functions, and the Fermi level. The 2DEG is located at the lower AlGaN/GaN interface, as schematically indicated in the inset.
The 2D sheet charge density in an AlGaN/GaN HEMT as calculated vs the gate bias for different AlGaN layer thicknesses (a) and Al compositions (b).
Calculated characteristics for an AlGaN/GaN HEMT at different gate voltages. The inset shows the dependence of the dc drain current as a function of the doping content for different Al compositions.
Output characteristics of AlGaN/GaN/SiC HEMTs before and after passivation at different gate voltages.
Temperature rise of the 2DEG in AlGaN/GaN/SiC HEMTs vs drain voltage at different gate biases before (a) and after (b) passivation.
The fit of the 2GEG temperature rise vs drain voltage as obtained for AlGaN/GaN/SiC HEMTs before and after passivation.
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