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Self-heating and trapping effects in AlGaN/GaN heterojunction field-effect transistors
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Image of FIG. 1.
FIG. 1.

The conduction-band edge calculated for an AlGaN/GaN HEMT with Ga-face polarity. In the plots are also reported the subband energies, the envelope wave functions, and the Fermi level. The 2DEG is located at the lower AlGaN/GaN interface, as schematically indicated in the inset.

Image of FIG. 2.
FIG. 2.

The 2D sheet charge density in an AlGaN/GaN HEMT as calculated vs the gate bias for different AlGaN layer thicknesses (a) and Al compositions (b).

Image of FIG. 3.
FIG. 3.

Calculated characteristics for an AlGaN/GaN HEMT at different gate voltages. The inset shows the dependence of the dc drain current as a function of the doping content for different Al compositions.

Image of FIG. 4.
FIG. 4.

Output characteristics of AlGaN/GaN/SiC HEMTs before and after passivation at different gate voltages.

Image of FIG. 5.
FIG. 5.

Temperature rise of the 2DEG in AlGaN/GaN/SiC HEMTs vs drain voltage at different gate biases before (a) and after (b) passivation.


Generic image for table
Table I.

The fit of the 2GEG temperature rise vs drain voltage as obtained for AlGaN/GaN/SiC HEMTs before and after passivation.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Self-heating and trapping effects in AlGaN/GaN heterojunction field-effect transistors