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Low-temperature grown near surface semiconductor saturable absorber mirror: Design, growth conditions, characterization, and mode-locked operation
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10.1063/1.3211296
/content/aip/journal/jap/106/5/10.1063/1.3211296
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/5/10.1063/1.3211296

Figures

Image of FIG. 1.
FIG. 1.

Calculated enhancement factor vs the operation wavelength for four SESAM structures: resonant cavity SESAM with antireflective cap layer , resonant cavity SESAM (RC), antiresonant cavity SESAM with antireflective cap layer , and antiresonant cavity SESAM (ARC).

Image of FIG. 2.
FIG. 2.

Calculated GDD vs the operation wavelength for four SESAM structures: resonant cavity SESAM with antireflective cap layer , resonant cavity SESAM (RC), antiresonant cavity SESAM with antireflective cap layer , and antiresonant cavity SESAM (ARC).

Image of FIG. 3.
FIG. 3.

Refractive index (black line) and calculated standing wave intensity (gray line) profiles for of the RC SESAM structure with quarter-wave antireflective coating of .

Image of FIG. 4.
FIG. 4.

PR spectra of SQWs.

Image of FIG. 5.
FIG. 5.

PL transients for SQWs: —short decay time and —long decay time.

Image of FIG. 6.
FIG. 6.

Nonlinear reflectivity measurements vs pulse energy fluence of SESAM1.

Image of FIG. 7.
FIG. 7.

Intensity autocorrelation and optical spectrum (inset) (a) and radio frequency spectrum of the mode-locked Yb:KYW gain medium with SESAM1.

Image of FIG. 8.
FIG. 8.

Intensity autocorrelation and optical spectrum (inset) (a) and radio frequency spectrum of the mode-locked Yb:KYW gain medium with SESAM2.

Tables

Generic image for table
Table I.

Epitaxial growth parameters of the SQW and SESAM structures (—growth temperature, —interruption time, and —wavelength).

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/content/aip/journal/jap/106/5/10.1063/1.3211296
2009-09-01
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low-temperature grown near surface semiconductor saturable absorber mirror: Design, growth conditions, characterization, and mode-locked operation
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/5/10.1063/1.3211296
10.1063/1.3211296
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